FQD1N60TM规格书库存现货仙童半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FQD1N60TM	文件：549.28 Kbytes Page：9 Pages	600V N-Channel MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
1N60	文件：71.1 Kbytes Page：1 Pages	GOLDBONDEDGERMANIUMDIODE GermaniumGlassDiode Features •GermaniumGlassDiode •RoHSCompliance	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
1N60	文件：197.55 Kbytes Page：4 Pages	SiliconAvalancheDiodes-1500WattMetalAxialLeadedTransientVoltageSuppressors FEATURES •Hermeticallysealed •Breakdownvoltagerange6.8-200volts •Glasspassivatedjunction •Excellentclampingcapability •Lowzenerimpedance •100surgetested •-55°Cto+150°C •Bi-directional MAXIMUMRATING •PeakPulsePower(Ppk):15000Watts(10x1000µs)@25°C(seedi	LittelfuseLittelfuse Inc. 力特富斯（Littelfuse）力特公司	Littelfuse
1N60	文件：80.99 Kbytes Page：2 Pages	SchottkyBarrierDiode Features 1.Highreliability 2.Lowreversecurrentandlowforwardvoltage Applications Lowcurrentrectificationandhighspeedswitching Construction Siliconepitaxialplanar	FORMOSAFormosa MS 美丽微半导体美丽微半导体股份有限公司	FORMOSA
1N60	文件：41.79 Kbytes Page：1 Pages	JEDECDO-7PACKAGE JEDECDO-7PACKAGE	ETC1List of Unclassifed Manufacturers 未分类制造商	ETC1
1N60	文件：143.99 Kbytes Page：8 Pages	1.2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC1N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpow	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
1N60	文件：310.86 Kbytes Page：2 Pages	GERMANIUMDIODES Features ·Metalsiliconjunction,majoritycarrierconduction ·Highcurrentcapability,Lowforwardvoltagedrop ·ExtremelylowreversecurrentlR ·Ultraspeedswitchingcharacteristics ·Smalltemperaturecoefficientofforwardcharacteristics ·SatisfactoryWavedetectione	DAESAN Daesan Electronics Corp.	DAESAN
1N60	文件：51.09 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE VOLTAGERANGE:40V CURRENT:0.03A FEATURES Metalsilliconjunctionmajoritycarrierconduction Highcurrentcapability,lowforwardvoltagedrop ExtremelylowreversecurrentIR Ultraspeedswitchingcharacteristics Smalltemperaturecoefficientofforwardcharacteristics	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
1N60	文件：239.88 Kbytes Page：2 Pages	SchottkyBarrierDiodesSMALLSIGNALSCHOTTKYDIODES30m/50mAMPERES40/45VOLTS Features: HighReliability LowReverseCurrentandLowForwardVoltage Applications: *LowCurrentRectificationandHighSpeedSwitching	WEITRONWEITRON 威堂電子科技	WEITRON
1N60	文件：127.55 Kbytes Page：1 Pages	600VN-ChannelMOSFET Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：138.98 Kbytes Page：2 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •MoistureSensitivity:Level1perJ-STD-020C MaximumRatings •Storage&OperatingJunctionTemperature:-65℃to+125℃	TGS Tiger Electronic Co.,Ltd	TGS
1N60	文件：72.86 Kbytes Page：3 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES •Metal-on-siliconjunction,majoritycarrierconduction •Highcurrentcapability,Lowforwardvoltagedrop •ExtremelylowreversecurrentIR •Ultraspeedswitchingcharacteristics •Smalltemperaturecoefficientofforwardcharacteristics •Satisfactorywavedetectionefficiency	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG
1N60	文件：947.3 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODE FEATURES ●Metal-on-siliconjunction,majoritycarrierconduction ●Highcurrentcapability,Lowforwardvoltagedrop ●ExtremelylowreversecurrentIr ●Ultraspeedswitchingcharacteristics ●Smalltemperaturecoefficientofforwardcharacteristics ●SatisfactoryWavedetectio	DIOTECH Diotech Company.	DIOTECH
1N60	文件：275.21 Kbytes Page：6 Pages	1.2Amps,600/650VoltsN-CHANNELMOSFET	UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司	UTC
1N60	文件：419.26 Kbytes Page：3 Pages	SchottkyBarrierRectifier Features •HighReliability •LowReverseCurrentandLowForwardVoltage ·Marking:Cathodebandandtypenumber •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 MaximumRatings •Storage&	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
1N60	文件：1.04021 Mbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES ReverseVoltage-40to45Volts ForwardCurrent-0.03/0.05Amperes FEATURES Fastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed 250C/10seconds,0.375”(9.5mm)leadlength,5lbs.(2.3kg)tension	SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司	SY
1N60	文件：75.67 Kbytes Page：1 Pages	Lowforwardvoltagedrop-lowpowerconsumption FEATURES Lowforwardvoltagedrop -lowpowerconsumption Thirtyyearsofprovenreliability -onemillionhoursmeantimebetweenfailures(MTBF) Verylownoiselevel Metallurgicallybonded	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
1N60	文件：365.394 Kbytes Page：2 Pages	45VDetectionswitchtube	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE
1N60	文件：365.313 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES	SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 PDF上传者：深圳市福田区吉富昌电子商行	SUNMATE
1N60	文件：434.49 Kbytes Page：6 Pages	N-CHANNELMOSFET DESCRIPTION 1N601N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu	ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司	ZSELEC

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详细参数

型号：
FQD1N60TM
功能描述：
MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	FQD1N60TM	onsemi(安森美)	23+	TO-252	9555	支持大陆交货,美金交易。原装现货库存。	询价
深圳市鼎盛源芯科技有限公司	FQD1N60TM	harris	16+	原厂封装	10000	全新原装正品,代理优势渠道供应,欢迎来电咨询	询价
深圳兆威电子有限公司	FQD1N60TM	VB	2019	SOT252	55000	绝对原装正品假一罚十!	询价
深圳市正迈科技有限公司	FQD1N60TM	FSC/ON	23+	原包装原封 □□	9980	原装进口特价供应 QQ 1304306553 更多详细咨询库存	询价
深圳市纳艾斯科技有限公司	FQD1N60TM	FAIRCHI	2020+	TO-252	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市维尔达电子有限公司	FQD1N60TM	FAIRCHILD	2023+	SOT252	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市鼎欣微电子有限公司	FQD1N60TM	FAIRCHILD/仙童	21+	TO-252	30000	只做正品原装现货	询价
深圳市国宇半导体科技有限公司	FQD1N60TM	F	23+	SOT252	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	FQD1N60TM	Fairchild/ON	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原厂渠道,现货配单	询价
深圳市汇莱威科技有限公司	FQD1N60TM		VB	SOT252	68900	原包原标签100%进口原装常备现货!	询价

更多FQD1N60TM供应商更新时间2024-6-6 15:14:00

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