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FQB19N20LTM中文资料PDF规格书
FQB19N20LTM规格书详情
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
• 21̀ A, 200 V, RDS(on) = 140 mΩ (Max.) @ VGS = 10 V,. ID = 9.7 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 30 pF)
• 100 Avalanche Tested
• RoHS Compliant
产品属性
- 型号：
FQB19N20LTM
- 功能描述：
MOSFET 200V N-Ch QFET Logic Level
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHI |
2020+ |
TO-263- |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
FAIRCHILD |
06+ |
原厂原装 |
4802 |
只做全新原装真实现货供应 |
询价 | ||
ON |
22+ |
TO263-3 |
818 |
全新原装亏本出13157115792 |
询价 | ||
onsemi(安森美) |
23+ |
D2PAK-3 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
FAIRCHILD/仙童 |
2022 |
TO-263 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ON/安森美 |
22+ |
ORIGINAL |
25800 |
原装正品,品质保证,值得你信赖. |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO263 |
9000 |
原装正品 |
询价 | ||
ONSEMI |
18+ROHS |
NA |
5200 |
全新原装!优势库存热卖中! |
询价 | ||
FAIRCHILDONSEMICONDUCTOR |
22+ |
N/A |
10400 |
现货,原厂原装假一罚十! |
询价 |
