FMC07N50E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=6.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FMC07N50E

N-CHANNEL SILICON POWER MOSFET

07N50

N-Channel650V(D-S)PowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrecti

EMD07N50A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS500V RDSON(MAX.)1.3Ω ID7A UIS,100Tested Pb‐FreeLeadPlating

EMD07N50F

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS500V RDSON(MAX.)1.3Ω ID7A UIS,100Tested Pb‐FreeLeadPlating

FMI07N50E

N-CHANNELSILICONPOWERMOSFET

FMP07N50E

N-CHANNELSILICONPOWERMOSFET

FMV07N50E

N-CHANNELSILICONPOWERMOSFET

SuperFAP-E3series Features •Maintainsbothlowpowerlossandlownoise •LowerRDS(on)characteristic •Morecontrollableswitchingdv/dtbygateresistance •SmallerVGSringingwaveformduringswitching •Narrowbandofthegatethresholdvoltage(3.0±0.5V) •Highaval

SDF07N50

SuperhighdensecelldesignforlowRDS(ON).

SDF07N50T

SuperhighdensecelldesignforlowRDS(ON).

SDF07N50T

N-ChannelMOSFETusesadvancedtrenchtechnology

STHI07N50

HIGHINJECTIONN-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS(IGBT)

•HIGHINPUTIMPEDANCE •LOWON-VOLTAGE •HIGHCURRENTCAPABILITY APPLICATIONS: •AUTOMOTIVEIGNITION •DRIVERSFORSOLENOIDSANDRELAYS N-channelHighInjectionPOWERMOStransis- tors(IGBT)whichfeaturesahighimpedancein- sulatedgateinputandalowon-resistance characteristi