零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FKS4105 | 40V P-Channel MOSFET Features ⚫AdvancedTrenchMOSTechnology ⚫LowGateCharge ⚫100EASGuaranteed ⚫GreenDeviceAvailable Applications ⚫LoadSwitches ⚫HardSwitchingandHighSpeedCircuit | FETEKFETek Technology Corp. 台灣東沅公司 東沅科技股份有限公司 | FETEK | |
RelampableSocket | VCC Visual Communications Company | VCC | ||
trueone-port,surface-acoustic-wave(SAW)resonator | ACTAdvanced Crystal Technology 先进的晶体先进的晶体技术 | ACT | ||
DesignConsiderationsforSwitchedModePowerSuppliesUsingAFairchildPowerSwitch(FPS)inaFlybackConverter Introduction Flybackswitchedmodepowersupplies(SMPS)areamongthemostfrequentlyusedpowercircuitsinhouseholdandconsumerelectronics.ThebasicfunctionofanSMPSistosupplyregulatedpowertotheloadonthesecondary,oroutputside.AnSMPStypicallyincorporatesapowertransfo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AdvancedPlanarTechnology AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesign | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedPlanarTechnologyLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FETEK |
22+ |
SOP-8 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
FETEK/東沅 |
21+ |
SOP8 |
15000 |
全新原装现货,假一赔十 |
询价 | ||
FETEK |
21+ |
SOP8 |
12197 |
询价 | |||
FETEK/東沅 |
SOP8 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
FETEK |
22+ |
SOP-8 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
FETEK/東沅 |
23+ |
SOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FETEK/東沅 |
2022 |
SOP8 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
FETEK/東沅 |
21+ |
SOP8 |
15000 |
全新原装现货 假一赔十 |
询价 | ||
FETEK/東沅 |
22+ |
SOP8 |
30000 |
原装正品 |
询价 | ||
FETEK/東沅 |
2023+ |
SOP8 |
12172 |
原厂全新正品旗舰店优势现货 |
询价 |
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