FIR2N10LTG

N-Channel Enhancement Mode Power MOSFET

2N10L

DrainCurrentID=2A@TC=25C

EMBA2N10A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS100V RDSON(MAX.)125mΩ ID14A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

F2N10A

N-ChannelEnhancementMOSFET

Features •VDS=100V,ID=2A •RDS(ON)=220mΩ@VGS=10V(Typ.) •RDS(ON)=240mΩ@VGS=4.5V(Typ.) •HighPowerandcurrenthandingcapability •Leadfreeproductisacquired •SurfaceMountPackage MainApplications •BatteryProtection •LoadSwitch •PowerManagement

HM2N10

N-ChannelEnhancementModePowerMOSFET

HM2N10B

N-ChannelEnhancementModePowerMOSFET

RFP2N10

2A,80Vand100V,1.05Ohm,N-ChannelPowerMOSFETs

RFP2N10

2A,80Vand100V,1.05Ohm,N-ChannelPowerMOSFETs

Description TheseareN-channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters.motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

RFP2N10L

2A,80Vand100V,1.050Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheRFP2N08LandRFP2N10LareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplishedth

RFP2N10L

N-Channel100-V(D-S)MOSFET

STN2N10L

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.35Ω ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDISKDRIVER

STN2N10L

N-Channel100-V(D-S)MOSFET

SW2N10

N-channelSOT-23MOSFET

UT2N10

2Amps,100VoltsN-CHANNELPOWERMOSFET

UTT2N10

COMPLEMENTARYENHANCEMENTMODEMOSFET