首页 >FIR180N10RG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FIR180N10RG | N-Channel Enhancement Mode Power Mosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | |
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
OptiMOSTM3Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
SuperiorAvalancheRuggedTechnology | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
100AvalancheTested | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
HighDenseCellDesign | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
100VN-ChannelTrenchMOSFET | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
HiPerFET-TMPowerMOSFET HiPerFETPowerMOSFET SingleDieMOSFET Features •ConformstoSOT-227Boutline •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance • | IXYS IXYS Integrated Circuits Division | IXYS | ||
SingleMOSFETDie VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETSingleMOSFETDie HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features •InternationalStandardPackage •miniBLOC,withAluminiumNitrideIsolation •Dynamicdv/dtRating •AvalancheRated •FastIntrinsicRectifier •LowRDS(on) •LowDrain-to-TabCapacitan | IXYS IXYS Integrated Circuits Division | IXYS | ||
PowerMOSFET | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·SynchronousRectification ·LowVoltagerelays ·BatteryChargers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsISOPLUS247 VDSS=100V ID25=165A RDS(on)=8mΩ trr≤250ns SingleMOSFETDie Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS | ||
SingleMOSFETDie VDSS=100V ID25=180A RDS(on)≤8mΩ SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages HighCurrentHandlingCapability AvalancheRated LowRDS(on)HDMOSTMProcess Fastintrinsicdiode | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiperFETPowerMOSFETs | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRated TrenchMV™PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features •Ultra-lowOnResistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect •175°COperatingTemperature Advantages •Easytomount •Spacesavings •High | IXYS IXYS Integrated Circuits Division | IXYS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
First |
23+ |
TO-TO-220 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
First |
2020+ |
TO-220 |
39710 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
FIRST/福斯特 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
First |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
infineon |
2023+ |
TO-220 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
First |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
First |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
FIRST/福斯特 |
2048+ |
TO220F/220/3P |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
FIRST/福斯特 |
21+ROHS |
TO220F/220/3P |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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