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FGP30N6S2

600V, SMPS II Series N-Channel IGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGP30N6S2

600V, SMPS II Series N-Channel IGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGP30N6S2

600V, SMPS II Series N-Channel IGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGP30N6S2

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 45A 167W TO220AB

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FGP30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGP30N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGP30N6S2D

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 45A 167W TO220AB

ONSEMION Semiconductor

安森美半导体安森美半导体公司

30N6S2

600V,SMPSIISeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGB30N6S2

600V,SMPSIISeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGB30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGB30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGB30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGB30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGB30N6S2DT

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGB30N6S2T

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N6S2

600V,SMPSIISeriesN-ChannelIGBT

GeneralDescription TheFGH30N6S2,FGP30N6S2,andFGB30N6S2areLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andreduc

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N6S2

600V,SMPSIISeriesN-ChannelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGH30N6S2D

600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode

GeneralDescription TheFGH30N6S2D,FGP30N6S2D,andFGB30N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatechargeandplateauvoltageandavalanchecapability(UIS).TheseLGCdevicesshortendelaytimes,andre

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

产品属性

  • 产品编号:

    FGP30N6S2

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.5V @ 15V,12A

  • 开关能量:

    55µJ(开),100µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    6ns/40ns

  • 测试条件:

    390V,12A,10 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220-3

  • 描述:

    IGBT 600V 45A 167W TO220AB

供应商型号品牌批号封装库存备注价格
FSC
0602+
TO-220
8925
优势库存L欢迎来电咨询
询价
FAIRCHILD
05+
原厂原装
5629
只做全新原装真实现货供应
询价
FAIRCHILD
2017+
TO220
24589
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
FAIRCHIL
08+(pbfree)
TO-220
8866
询价
FAIRCHILD
23+
TO220
9365
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
23+
N/A
59810
正品授权货源可靠
询价
仙童
1746+
TO220
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
FAIRCHIL
23+
TO-TO-220
12300
全新原装真实库存含13点增值税票!
询价
FAIRCHILD
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多FGP30N6S2供应商 更新时间2024-5-24 10:18:00