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FGB20N6S2	文件：183.25 Kbytes Page：8 Pages	600V, SMPS II Series N-Channel IGBT GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGB20N6S2D	文件：232.38 Kbytes Page：9 Pages	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGB20N6S2D	文件：231.95 Kbytes Page：9 Pages	600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGB20N6S2DT	文件：231.95 Kbytes Page：9 Pages	600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
20N6S2D	文件：231.95 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH20N6S2	文件：183.25 Kbytes Page：8 Pages	600V,SMPSIISeriesN-ChannelIGBT GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH20N6S2D	文件：232.38 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthTMDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGH20N6S2D	文件：231.95 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGP20N6S2	文件：183.25 Kbytes Page：8 Pages	600V,SMPSIISeriesN-ChannelIGBT GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FGP20N6S2D	文件：231.95 Kbytes Page：9 Pages	600V,SMPSIISeriesN-ChannelIGBTwithAnti-ParallelStealthDiode GeneralDescription TheFGH20N6S2DFGP20N6S2D,FGB20N6S2DareLowGateCharge,LowPlateauVoltageSMPSIIIGBTscombiningthefastswitchingspeedoftheSMPSIGBTsalongwithlowergatecharge,plateauvoltageandhighavalanchecapability(UIS). TheseLGCdevicesshortendelaytimes,andre	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

详细参数

型号：
FGB20N6S2
功能描述：
IGBT 晶体管 Sgl N-Ch 600V
RoHS：
否
制造商：
Fairchild Semiconductor
配置：
集电极—发射极最大电压
VCEO：
650 V
集电极—射极饱和电压：
2.3 V
栅极/发射极最大电压：
20 V 在25
C的连续集电极电流：
150 A
栅极—射极漏泄电流：
400 nA
功率耗散：
187 W
封装/箱体：
TO-247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	FGB20N6S2	FAIRCHIL	23+	TO-263	12300	全新原装真实库存含13点增值税票!	询价
深圳市博浩通科技有限公司	FGB20N6S2	FAIRCHIL	23+	TO-263	8600	全新原装现货	询价
深圳市特顺芯科技有限公司	FGB20N6S2	FAIRCHIL	08+(pbfree)	TO-263	8866		询价
深圳市永贝尔科技有限公司	FGB20N6S2	FAIRCHILD	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市科恒伟业电子有限公司	FGB20N6S2	FAIRCHILD	1822+	TO-263	9852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市百视威讯电子科技有限公司	FGB20N6S2		23+	N/A	48700	正品授权货源可靠	询价
深圳市赛芯源科技有限公司	FGB20N6S2	FAIRCHILD	18+	TO-263	41200	原装正品,现货特价	询价
深圳市正迈科技有限公司	FGB20N6S2	FSC/ON	23+	原包装原封 □□	8254	原装进口特价供应 QQ 1304306553 更多详细咨询库存	询价
瀚佳科技(深圳)有限公司	FGB20N6S2	FAIRCHILD	21+		35200	一级代理/放心采购	询价
深圳市威尔健半导体有限公司	FGB20N6S2	NEC	23+	TO-252	69820	终端可以免费供样,支持BOM配单!	询价

更多FGB20N6S2供应商更新时间2024-5-13 15:30:00

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