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FDPF6N60ZU

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDPF6N60ZUT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDPF6N60ZUT

N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF6N60ZUT_12

N-Channel MOSFET, FRFET 600V, 4.5A, 2廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6N60

6.2Amps,600/650VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC6N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

6N60

N-CHANNELPOWERMOSFET

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣诺电子淄博圣诺电子工程有限公司

6N60

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

6N60

N-Channel600V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

6N60

AvalancheEnergySpecified

DESCRITION ·Designedforhighefficiencyswitchmodepowersupply. FEATURES ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage-:VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance:RDS(on)=1.2Ω(Max) ·AvalancheEnergySpecified ·FastSwitching ·SimpleDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

6N60

600VN-ChannelPowerMOSFET

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

6N60

6.2Amps,600/650VoltsN-CHANNELMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

6N60

6Amps,600VoltsN-CHANNELMOSFET

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

6N60

6.2A,600VN-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

6N60

N-CHANNELPOWERMOSFET

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

6N60

N-CHANNELMOSFET

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

6N60A

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

6N60A

6A600VN-channelenhancedfieldeffecttransistor

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

6N60AF

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

6N60B

6Amps,600VoltsN-CHANNELMOSFET

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

6N60C

600VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildísproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingp

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    FDPF6N60ZU

  • 功能描述:

    MOSFET 600V 4.5A N-Chan FRFET UniFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
21+
TO-220
9800
只做原装正品假一赔十!正规渠道订货!
询价
isc
2024
TO-220F
2250
国产品牌isc,可替代原装
询价
仙童
17+
NA
6200
100%原装正品现货
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ONSemiconductor
18+
NA
3006
进口原装正品优势供应QQ3171516190
询价
FAIRCHILD
22+23+
TO220F
9858
绝对原装正品全新进口深圳现货
询价
Fairchild/ONSemiconducto
19+
TO-220-3FullPack
56800
只卖原装正品!价格超越代理!可开增值税发票!
询价
FSC进口原
19+
TO-220F
9860
一级代理
询价
23+
N/A
85300
正品授权货源可靠
询价
三年内
1983
纳立只做原装正品13590203865
询价
更多FDPF6N60ZU供应商 更新时间2024-5-17 17:31:00