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MDF8N60B

N-ChannelMOSFET600V,8A,1.05(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF8N60BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDF8N60BTH

N-ChannelMOSFET600V,8A,1.05(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF8N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDF8N60TH

N-ChannelMOSFET600V,8A,1.0(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP8N60

N-ChannelMOSFET600V,8A,1.0(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP8N60TH

N-ChannelMOSFET600V,8A,1.0(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP8N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MS8N60

N-ChannelEnhancementModePowerMOSFET

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

MSF8N60

N-ChannelEnhancementModePowerMOSFET

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

MT8N60C

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

MTH8N60

PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGateTMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulatorsconverters,solenoidandrealydrivers.

MotorolaMotorola, Inc

摩托罗拉

MTH8N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTM8N60

PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGateTMOS

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGateTMOS TheseTMOSPowerFETsaredesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulatorsconverters,solenoidandrealydrivers.

MotorolaMotorola, Inc

摩托罗拉

供应商型号品牌批号封装库存备注价格
FAIRCILD
22+
TO-220
8000
原装正品支持实单
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD/仙童
21+ROHS
TO-220
172000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
isc
2024
TO-220
3800
国产品牌isc,可替代原装
询价
F
08+(pbfree)
TO-220
8866
询价
23+
N/A
90450
正品授权货源可靠
询价
FAIRCHILD/仙童
23+
QFN
50000
全新原装正品现货,支持订货
询价
FAIRCHILD/仙童
2022
QFN
80000
原装现货,OEM渠道,欢迎咨询
询价
FAIRCHILD
QFN
68900
原包原标签100%进口原装常备现货!
询价
FAIRCHILD/仙童
22+21+
QFN
6000
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
更多FDP8N60C供应商 更新时间2024-5-23 10:14:00