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FDP18N20F

N-Channel MOSFET 200V, 18A, 0.14廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP18N20F

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP18N20F

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.14Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP18N20F

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

18N20

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

18N20A

18A竊?00VN-CHANNELMOSFET

KIAGuangdong Keyia Semiconductor Technology Co., Ltd

可易亚半导体广东可易亚半导体科技有限公司

18N20GH

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

18N20GJ-HF

N-Channel200V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

18N20GS

N-CHANNELENHANCEMENTMODEPOWERMOSF

▼LowGateCharge ▼SimpleDriveRequirement ▼FastSwitchingCharacteristic ▼RoHSCompliant&Halogen-Free Description AP18N20seriesarefromAdvancedPowerinnovateddesignand siliconprocesstechnologytoachievethelowestpossibleon-resistance andfastswitchingperformance.Itp

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP18N20AGS-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP18N20GH-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowv

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP18N20GH-HF

FastSwitchingCharacteristics

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP18N20GH-HF

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

AP18N20GI

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

AP18N20GI

N-CHANNELENHANCEMENTMODEPOWERMOSFET

BVDSS200V RDS(ON)170mΩ ID18A Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220CFMisolationpackageiswidelypreferredforcommercial-indust

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP18N20GI-HF

FastSwitchingCharacteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP18N20GJ-HF

FastSwitchingCharacteristics

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP18N20GJ-HF

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowv

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

AP18N20GJ-HF

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

AP18N20GP-HF

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

详细参数

  • 型号:

    FDP18N20

  • 功能描述:

    MOSFET 200V N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi
24+
TO-220-3
30000
晶体管-分立半导体产品-原装正品
询价
FSC进口原
22+
TO-220
3
长源创新-只做原装-----假一赔十
询价
isc
2024+
TO-220
5000
询价
onsemi(安森美)
23+
TO-220
7828
支持大陆交货,美金交易。原装现货库存。
询价
FAIRCHILD
08+(pbfree)
TO-220
8866
询价
Fairchild
23+
TO-220
7750
全新原装优势
询价
FAIRCHILD
24+
TO-220
5000
只做原装公司现货
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ONSemiconductor
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
FAIRCHILD
22+23+
TO220
8645
绝对原装正品全新进口深圳现货
询价
更多FDP18N20供应商 更新时间2024-6-8 14:14:00