首页 >FDME410NZT>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=53A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=70mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
100VN-ChannelMOSFETSDMOS? GeneralDescription TheAOT410L/AOB410LisfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge&lowQrr.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgen | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
N-ChannelMOSFETusesadvancedSGTtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
100VN-ChannelMOSFET GeneralDescription TheAOW410isfabricatedwithSDMOSTMtrenchtechnologythatcombinesexcellentRDS(ON)withlowgatecharge&lowQrr.Theresultisoutstandingefficiencywithcontrolledswitchingbehavior.ThisuniversaltechnologyiswellsuitedforPWM,loadswitchingandgeneralpurp | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HoneywellZephyrTMDigitalAirflowSensors | IDECIDEC Corporation IDEC株式会社 | IDEC | ||
HoneywellZephyrTMDigitalAirflowSensors | IDECIDEC Corporation IDEC株式会社 | IDEC | ||
HoneywellZephyrTMDigitalAirflowSensors | IDECIDEC Corporation IDEC株式会社 | IDEC | ||
HoneywellZephyrTMDigitalAirflowSensors | IDECIDEC Corporation IDEC株式会社 | IDEC | ||
HoneywellZephyrTMDigitalAirflowSensors | IDECIDEC Corporation IDEC株式会社 | IDEC | ||
HoneywellZephyrTMDigitalAirflowSensors | IDECIDEC Corporation IDEC株式会社 | IDEC | ||
MMIC | RFHICRFHIC RFHIC | RFHIC | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS | ||
PhotoMOSRELAYS FEATURES 1.Lowonresistancefornormallyclosedtype ThishasbeenrealizedthankstothebuiltinMOSFETprocessedbyourproprietarymethod,DSD(Double-diffusedandSelectiveDoping)method. 2.Controlslow-levelanalogsignals PhotoMOSrelaysfeatureextremelylowclosed-circuitoffsetvo | NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司 | NAIS |
详细参数
- 型号：
FDME410NZT
- 功能描述：
MOSFET 20V N-Channel PowerTrench
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
20+ |
DFN1.6X1.6-6 |
5500 |
代理库存,房间现货,有挂就是现货 |
询价 | ||
FAIRCHILD |
17+ |
原厂原封 |
6523 |
进口原装公司百分百现货可出样品 |
询价 | ||
23+ |
N/A |
49200 |
正品授权货源可靠 |
询价 | |||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
FAIRCHI |
2020+ |
DFN6 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
Fairchild |
1930+ |
N/A |
2510 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
ON |
1809+ |
DFN |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ON/安森美 |
22+ |
DFN1.6X1.6-6 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
Fairchild |
22+ |
NA |
2510 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Fairchild/ON |
22+ |
6PowerUFDFN |
9000 |
原厂渠道,现货配单 |
询价 |
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