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FDI045N10A

N-Channel PowerTrench짰 MOSFET 100 V, 164 A, 4.5 m廓

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

045N10A

100VN-ChannelMOSFET

•Fastswitchingspeed •Lowgatecharge,QG=54nC(typical) •Highperformancechanneltechnologycanachieveverylow RDS(on). •Highpowerandhighcurrenthandlingcapacity •MeetRoHSstandards •VDS=100V •ID(atVGS=10V)=100A •RDS(ON)(atVGS=10V)

UMWUMW

友台友台半导体

045N10N

OptiMOSTM3Power-Transistor,100V

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

045N10N

OptiMOSTM3Power-Transistor

VDS100V RDS(on),max4.5mW ID64A Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Ideal

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

FDP045N10A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=164A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP045N10A

100VN-ChannelMOSFET

•Fastswitchingspeed •Lowgatecharge,QG=54nC(typical) •Highperformancechanneltechnologycanachieveverylow RDS(on). •Highpowerandhighcurrenthandlingcapacity •MeetRoHSstandards •VDS=100V •ID(atVGS=10V)=100A •RDS(ON)(atVGS=10V)

UMWUMW

友台友台半导体

FDP045N10A

N-ChannelPowerTrench짰MOSFET100V,164A,4.5m

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF045N10A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDPF045N10A

N-ChannelPowerTrench짰MOSFET100V,67A,4.5m

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HY045N10B

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微华羿微电子股份有限公司

HY045N10MF

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微华羿微电子股份有限公司

HY045N10P

N-ChannelEnhancementModeMOSFET

HUAYIHUAYI MICROELECTRONICS CO.,LTD.

华羿微华羿微电子股份有限公司

KU045N10P

N-chTrenchMOSFET

GeneralDescription ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConverter,SynchronousRectificationandaloadswitchinbatterypoweredapplications FEATU

KECKEC CORPORATION

KEC株式会社

详细参数

  • 型号:

    FDI045N10A

  • 功能描述:

    MOSFET N-CH 100V 120A I2PAK-3

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    PowerTrench®

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
23+
I2PAK(TO-262)
7793
支持大陆交货,美金交易。原装现货库存。
询价
FAIRCHILD
22+23+
TO-262
11100
绝对原装正品全新进口深圳现货
询价
FAIRCHILD/仙童
22+
TO-262
23336
原装正品现货
询价
FSC/ON
23+
原包装原封 □□
7000
原装进口特价供应 QQ 1304306553 更多详细咨询 库存
询价
FAIRCHILD/仙童
22+
TO-262
360000
进口原装房间现货实库实数
询价
FAIRCHILD/仙童
2021+
TO-262
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
FAIRCHILD/仙童
21+
TO-262
1709
询价
FAIRCHILD/仙童
TO220
265209
假一罚十原包原标签常备现货!
询价
FAIRCHILD/仙童
22+
TO-262
9600
原装现货,优势供应,支持实单!
询价
FAIRCHILD仙童
23+
TO-2623L(I2PAK)
10000
公司只做原装正品
询价
更多FDI045N10A供应商 更新时间2024-6-3 17:37:00