FDG6322C中文资料PDF规格书
FDG6322C规格书详情
General Description
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
Features
■ N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V,
RDS(ON) = 5.0 Ω @ VGS= 2.7 V.
■ P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V,
RDS(ON) = 1.5 Ω @ VGS= -2.7V.
■ Very small package outline SC70-6.
■ Very low level gate drive requirements allowing direct
operation in 3 V circuits (VGS(th) < 1.5 V).
■ Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
产品属性
- 型号:
FDG6322C
- 功能描述:
MOSFET SC70-6 COMP N-P-CH
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
SOT-363 |
354000 |
询价 | |||
FAIRCHILD/仙童 |
22+ |
SOT363 |
25000 |
只有原装绝对原装,支持BOM配单! |
询价 | ||
Onsemi |
22+ |
NA |
50000 |
100%原装正品现货,现货型号众多加QQ咨询 |
询价 | ||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
询价 | ||
FAIRCHILD |
18+ |
SOT363 |
65000 |
一级代理/全新现货/长期供应! |
询价 | ||
FAIRCHILD |
2023+ |
SOT363 |
50000 |
原装现货 |
询价 | ||
Fairchild |
原装 |
12419 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
FAIRCHILDONSEMICONDUCTOR |
标准封装 |
58998 |
一级代理原装正品现货期货均可订购 |
询价 | |||
FAIRCHILD/仙童 |
24+ |
SOT363 |
154393 |
明嘉莱只做原装正品现货 |
询价 | ||
FAIRCHILD |
23+ |
原厂封装 |
9526 |
询价 |