FDB13AN06A0

N-ChannelPowerTrenchMOSFET60V,62A,13.5mohm

N-ChannelPowerTrench®MOSFET60V,62A,13.5mΩ Features •rDS(ON)=11.5mΩ(Typ.),VGS=10V,ID=62A •Qg(tot)=22nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •Mot

FDB13AN06A0

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=62A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FDD13AN06A0

N-ChannelPowerTrenchMOSFET

FDD13AN06A0

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=50A RDS(ON)

FDP13AN06A0

N-ChannelPowerTrenchMOSFET60V,62A,13.5mohm

N-ChannelPowerTrench®MOSFET60V,62A,13.5mΩ Features •rDS(ON)=11.5mΩ(Typ.),VGS=10V,ID=62A •Qg(tot)=22nC(Typ.),VGS=10V •LowMillerCharge •LowQRRBodyDiode •UISCapability(SinglePulseandRepetitivePulse) •QualifiedtoAECQ101 Applications •Mot

FDP13AN06A0

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=62A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=13.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC