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IRF1404LPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404LPBF

HEXFET짰PowerMOSFET

Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404PBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404PBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404PBF

HEXFET짰PowerMOSFET

Description SeventhGenerationHEXFETPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404S

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404S

PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A??

Description SeventhGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404S

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1404SPBF

HEXFET짰PowerMOSFET

Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperature

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404SPBF

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404SPBF

HEXFET짰PowerMOSFET

Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404STRLPBF

AdvancedProcessTechnology

Description SeventhGenerationHEXFETÆPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404Z

AdvancedProcessTechnology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF1404Z

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1404Z

N-ChannelMOSFET

■Features ●VDS(V)=40V ●ID=75A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

IRF1404Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404Z

AdvancedProcessTechnology

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF1404ZGPBF

HEXFET짰PowerMOSFET

IRFInternational Rectifier

英飞凌英飞凌科技公司

详细参数

  • 型号:

    FD1404

  • 制造商:

    BACO Controls Inc

供应商型号品牌批号封装库存备注价格
3M
24
全新原装 货期两周
询价
3M
2022+
20
全新原装 货期两周
询价
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
询价
DIODES(美台)
23+
SMD50324P
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
DIODES-美台
24+25+/26+27+
车规-时钟晶振
9417
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
23+
N/A
98000
一级代理放心采购
询价
PERICOM
21+ROHS
4-SMD
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HIT
22+
CAN3
5000
进口原装!现货库存
询价
2021+
CAN
6430
原装现货/欢迎来电咨询
询价
DIODES/美台
23+
NA
30000
房间原装现货特价热卖,有单详谈
询价
更多FD1404供应商 更新时间2024-6-19 16:06:00