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1F4G

FASTRECOVERYPLASTICRECTIFIER

FEATURE •Fastswitching •Highcurrentcapability •Lowforwardvoltagedrop •Lowpowerloss,highefficiency •Highsurgecapability •Hightemperaturesolderingguaranteed260°C/10sec/0.375 leadlengthat5lbstension •Φ0.6mmleads

CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD

重庆平伟实业重庆平伟实业股份有限公司

1F4G

CURRENT1.0AmpereVOLTAGE50to1000Volts

Features •Fastswitching •Lowleakage •Lowforwardvoltagedrop •Highcurrentcapability •Glasspassivatedjunction •Highswitchingreliability

DAESAN

Daesan Electronics Corp.

1F4G

FASTRECOVERYGLASSPASSIVATEDRECTIFIER

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

1F4G

GLASSPASSIVATEDJUNCTIONFASTSWITCHINGRECTIFIER(VOLTAGE-50to1000VoltsCURRENT-1.0Amperes)

VOLTAGE50to600VoltsCURRENT1.0Amperes FEATURES •Highcurrentcapability. •PlasticpackagehasUnderwritersLaboratories FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •Lowleakage. •Fastswitchingforhighefficiency. •Exceedsenvironme

PANJITPANJIT International Inc.

强茂強茂股份有限公司

AA1F4M

TheAA1F4Misdesignedforusemediumspeedswitchingcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AA1F4N

NPNSILICONTRANSISTOR

DESCRIPTION TheAA1F4Nisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AA1F4Z

On-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=22kΩ) •ComplementarytransistorwithAN1F4Z

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AA1F4Z

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

FEATURES •On-chipbiasresistor (R1=22kΩ) •ComplementarytransistorwithAN1F4Z

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

AN1F4M

PNPSILICONTRANSISTOR

DESCRIPTION TheAN1F4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AN1F4N

PNPSILICONTRANSISTOR

DESCRIPTION TheAN1F4Nisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AN1F4Z

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=22kΩ) •ComplementarytransistorwithAA1A4Z

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

AN1F4Z

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

FEATURES •On-chipbiasresistor (R1=22kΩ) •ComplementarytransistorwithAA1A4Z

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BA1F4M

NPNSILICONTRANSISTOR

DESCRIPTION TheBA1F4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

BA1F4N

NPNSILICONTRANSISTOR

DESCRIPTION TheBA1F4Nisdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypeNPNtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

BA1F4Z

COMPOUNDTRANSISTORon-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching FEATURES •On-chipbiasresistor (R1=22kΩ) •ComplementarytransistorwithBN1F4Z

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

BA1F4Z

COMPOUNDTRANSISTOR

on-chipresistorNPNsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=22kΩ) •ComplementarytransistorwithBN1F4Z

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

BN1F4M

TheBN1F4Misdesignedforuseinmediumspeedswitchingcircuit.

DESCRIPTION TheBN1F4Misdesignedforuseinmediumspeedswitchingcircuit. FEATURE ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

BN1F4N

TheBN1F4Nisesigedforuseinmediumspeedswitchingcircuit.

DESCRIPTION TheBN1F4Nisdsignedforuseinmediumspeedswitchingcircuit. FEATURES ●Biasresistorsbuilt-intypePNPtransistorequivalentcircuit.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

BN1F4Z

on-chipresistorPNPsiliconepitaxialtransistorFormid-speedswitching

FEATURES •On-chipbiasresistor(R1=22kΩ) •ComplementarytransistorwithBA1F4Z

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

BN1F4Z

COMPOUNDTRANSISTOR

on-chipresistorPNPsiliconepitaxialtransistor Formid-speedswitching FEATURES •On-chipbiasresistor (R1=22kΩ) •ComplementarytransistorwithBA1F4Z

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

晶体管资料

  • 型号:

    FA1F4Z

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-N+R

  • 性质:

    中速 (MS)_开关管 (SW)

  • 封装形式:

    贴片封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    DTC124TK,KSR1111,UN2217,2SC4120,

  • 最大耗散功率:

    0.2W

  • 放大倍数:

  • 图片代号:

    H-15

  • vtest:

    60

  • htest:

    999900

  • atest:

    .1

  • wtest:

    .2

详细参数

  • 型号:

    FA1F4Z

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD

供应商型号品牌批号封装库存备注价格
NEC
2008++
SOT-23
6250
新进库存/原装
询价
RENESAS
23+
SOT-23
63000
原装正品现货
询价
NEC
23+
SOT-23
42854
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
NEC
06+PB
SOT23
4300
全新原装进口自己库存优势
询价
NEC
16+
SOT-23
1400
原装现货假一罚十
询价
NEC
17+
SOT23
9988
只做原装进口,自己库存
询价
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
只做原装
21+
SOT23
36520
一级代理/放心采购
询价
NEC
SOT23
68900
原包原标签100%进口原装常备现货!
询价
NEC
22+
SOT-23
8000
原装正品支持实单
询价
更多FA1F4Z供应商 更新时间2024-6-15 16:30:00