零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
F9Z34NS | Advanced Process Technology ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
AUTOMOTIVEGRADEAdvancedPlanarTechnology Description SpecificallydesignedforAutomotiveapplications,thiscellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedPlanarTechnology Features •AdvancedPlanarTechnology •P-ChannelMOSFET •DynamicdV/dTRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated •RepetitiveAvalancheAlloweduptoTjmax •Lead-Free,RoHSCompliant •AutomotiveQualified* | KERSEMI Kersemi Electronic Co., Ltd. | |||
MinisizeofDiscretesemiconductorelements | ETC1List of Unclassifed Manufacturers 未分类制造商 | |||
P-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技 | |||
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A) Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | |||
SurfaceMount Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
P-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedPlanarTechnology | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=-55V,Rds(on)=0.10ohm,Id=-19A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | |||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰POWERMOSFET HEXFET®PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR |
2017+ |
TO263 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
IR |
23+ |
TO263 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
23+ |
N/A |
59510 |
正品授权货源可靠 |
询价 | |||
IR |
23+ |
TO-263 |
10000 |
公司只做原装正品 |
询价 | ||
IR |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
22+ |
TO-263 |
6000 |
十年配单,只做原装 |
询价 | ||
IR |
TO263 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
原装正品 |
23+ |
TO-263 |
42661 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
N/A |
23+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 |
相关规格书
更多- FA
- FA0108RN02BE
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- FA0115RSWCQE
- FA01219A
- FA01384
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- FA-03-1-B-1
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- FA-03-1-B-5
- FA-03-1-B-7
- FA-03-1-B-9
- FA-03-1-B-B
- FA-03-1-K-0
- FA-03-1-K-2
- FA-03-1-K-4
- FA-03-1-K-6
- FA-03-1-K-8
- FA-03-1-K-A
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- FA-03-1-L-1
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相关库存
更多- FA0108RN02B
- FA0108RN02BE
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- FA0108RNWCQE
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- FA0108RS02BE
- FA0108RS02QE
- FA0108RSWCB
- FA0108RSWCBE
- FA0108RSWCQE
- FA0115RN02B
- FA0115RN02BE
- FA0115RN02QE
- FA0115RNWCB
- FA0115RNWCBE
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- FA-03-1-B-A
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- FA-03-1-K-3
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- FA-03-1-K-7
- FA-03-1-K-9
- FA-03-1-K-B
- FA-03-1-L-0
- FA-03-1-L-2
- FA-03-1-L-4
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