零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
POWERMOSFET Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFETs FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightmeperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=-60V,Rds(on)=0.28ohm,Id=-11A) Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-12A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
-55VP-ChannelMOSFET Features VDS(V)=-55V ID=-12A(VGS=-10V) RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-12A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Lead-Free | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
5500 |
现货,全新原装 |
询价 | ||
IR |
23+ |
TO-263 |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
23+ |
N/A |
46580 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
IR |
22+ |
TO-263 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO-263 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
VBSEMI |
19+ |
TO-263 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
IR |
23+ |
TO-263 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
21+ROHS |
TO-263 |
83772 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
IR |
22+ |
SOT23 |
8000 |
原装正品支持实单 |
询价 |
相关规格书
更多- FA13842
- FA13842P
- FA3635
- FA3641
- FA5301P
- FA5304S-TE1
- FA5310
- FA5310S-TE1
- FA5311B
- FA5311S-TE1
- FA5315
- FA5317
- FA5331M-TE1
- FA5332M-TE1
- FA5511
- FA7610N-TE1
- FA7612
- FA7615M-TE2
- FA82371MX
- FAN1537PA
- FAN1537PB
- FAN5056MV85
- FAN5063M
- FAN5066M
- FAN5091MTC
- FAN5093MTC
- FAN5236MTC
- FAN5240MTC
- FAN7554
- FAN8024DTF
- FAN8038B
- FAN8727
- FB2031BB
- FB2033BB
- FB2033K
- FB2041BB
- FC117-TL
- FC80960HD66
- FDA207
- FDB6035AL
- FDB6670AL
- FDB7030L
- FDC37B807
- FDC37C65CLJP
- FDC37C665IR
相关库存
更多- FA13842N-TE1
- FA13844
- FA3635P
- FA4105A
- FA5304
- FA5305
- FA5310B
- FA5311
- FA5311P
- FA5314
- FA5316
- FA5317S-TE1
- FA5331P
- FA5332P
- FA7610
- FA7611M-TE1
- FA7615M
- FA7617
- FA82438MX
- FAN1537PAC
- FAN2500SX
- FAN5059M
- FAN5063MX
- FAN5071M
- FAN5091MTCX
- FAN5093MTCX
- FAN5236QSC
- FAN7527
- FAN8024BD
- FAN8034L
- FAN8082
- FB2031
- FB2033A
- FB2033H
- FB2040
- FC101-TL
- FC80486DX4-100
- FD-1400-AJ
- FDB6030L
- FDB603AL
- FDB7030BL
- FDB7045L
- FDC37C651QFP
- FDC37C665GT
- FDC37C669