F4522规格书应用电路供应价格ITF第7页-114ic电子网

首页 >F452>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
MCP452S	文件：1.17287 Mbytes Page：50 Pages	13.56MHzRead/WritePassiveRFIDDevice DESCRIPTIONOFDEVICEFEATURES TheMCRF450/451/452/455isacontactlessread/writepassiveRFIDdevicethatisoptimizedfor13.56MHz RFcarriersignal.ThedeviceneedsanexternalLCresonantcircuittocommunicatewirelesslywiththeInterrogator.Thedeviceispoweredremotelybyrectif	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
MCP452SB	文件：1.17287 Mbytes Page：50 Pages	13.56MHzRead/WritePassiveRFIDDevice DESCRIPTIONOFDEVICEFEATURES TheMCRF450/451/452/455isacontactlessread/writepassiveRFIDdevicethatisoptimizedfor13.56MHz RFcarriersignal.ThedeviceneedsanexternalLCresonantcircuittocommunicatewirelesslywiththeInterrogator.Thedeviceispoweredremotelybyrectif	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
MCP452SN	文件：1.17287 Mbytes Page：50 Pages	13.56MHzRead/WritePassiveRFIDDevice DESCRIPTIONOFDEVICEFEATURES TheMCRF450/451/452/455isacontactlessread/writepassiveRFIDdevicethatisoptimizedfor13.56MHz RFcarriersignal.ThedeviceneedsanexternalLCresonantcircuittocommunicatewirelesslywiththeInterrogator.Thedeviceispoweredremotelybyrectif	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
MCP452W	文件：1.17287 Mbytes Page：50 Pages	13.56MHzRead/WritePassiveRFIDDevice DESCRIPTIONOFDEVICEFEATURES TheMCRF450/451/452/455isacontactlessread/writepassiveRFIDdevicethatisoptimizedfor13.56MHz RFcarriersignal.ThedeviceneedsanexternalLCresonantcircuittocommunicatewirelesslywiththeInterrogator.Thedeviceispoweredremotelybyrectif	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
MCP452WB	文件：1.17287 Mbytes Page：50 Pages	13.56MHzRead/WritePassiveRFIDDevice DESCRIPTIONOFDEVICEFEATURES TheMCRF450/451/452/455isacontactlessread/writepassiveRFIDdevicethatisoptimizedfor13.56MHz RFcarriersignal.ThedeviceneedsanexternalLCresonantcircuittocommunicatewirelesslywiththeInterrogator.Thedeviceispoweredremotelybyrectif	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
MCP452WF	文件：1.17287 Mbytes Page：50 Pages	13.56MHzRead/WritePassiveRFIDDevice DESCRIPTIONOFDEVICEFEATURES TheMCRF450/451/452/455isacontactlessread/writepassiveRFIDdevicethatisoptimizedfor13.56MHz RFcarriersignal.ThedeviceneedsanexternalLCresonantcircuittocommunicatewirelesslywiththeInterrogator.Thedeviceispoweredremotelybyrectif	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
MCP452WFB	文件：1.17287 Mbytes Page：50 Pages	13.56MHzRead/WritePassiveRFIDDevice DESCRIPTIONOFDEVICEFEATURES TheMCRF450/451/452/455isacontactlessread/writepassiveRFIDdevicethatisoptimizedfor13.56MHz RFcarriersignal.ThedeviceneedsanexternalLCresonantcircuittocommunicatewirelesslywiththeInterrogator.Thedeviceispoweredremotelybyrectif	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
MCP452X	文件：1.17287 Mbytes Page：50 Pages	13.56MHzRead/WritePassiveRFIDDevice DESCRIPTIONOFDEVICEFEATURES TheMCRF450/451/452/455isacontactlessread/writepassiveRFIDdevicethatisoptimizedfor13.56MHz RFcarriersignal.ThedeviceneedsanexternalLCresonantcircuittocommunicatewirelesslywiththeInterrogator.Thedeviceispoweredremotelybyrectif	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
MCRF452	文件：1.17287 Mbytes Page：50 Pages	13.56MHzRead/WritePassiveRFIDDevice DESCRIPTIONOFDEVICEFEATURES TheMCRF450/451/452/455isacontactlessread/writepassiveRFIDdevicethatisoptimizedfor13.56MHz RFcarriersignal.ThedeviceneedsanexternalLCresonantcircuittocommunicatewirelesslywiththeInterrogator.Thedeviceispoweredremotelybyrectif	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
MMBD452	文件：227.75 Kbytes Page：3 Pages	DualHot-CarrierDiodes FEATURES ●Verylowcapacitance. ●Extremelylowminoritycarrierlifetime. ●Lowreverseleakage. ●PowerdissipationPd=225mW. APPLICATIONS ●DesignedprimarilyforUHFandVHFdetectorapplications.	DSK Diode Semiconductor Korea	DSK
MMBD452	文件：241.34 Kbytes Page：2 Pages	DualHotCarrierMixerDiodes Features ◇Verylowcapacitance. ◇Extremelylowminoritycarrierlifetime. ◇Lowreverseleakage. ◇PowerdissipationPd=225mW. Applications ◇DesignedprimarilyforUHFandVHFdetectorapplications.	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司	LUGUANG
MMBD452	文件：212.41 Kbytes Page：3 Pages	SchottkyBarrierDiodes	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
MMBD452	文件：155.59 Kbytes Page：3 Pages	DualHot-CarrierDiodes FEATURES ●Verylowcapacitance. ●Extremelylowminoritycarrierlifetime. ●Lowreverseleakage. ●PowerdissipationPd=225mW. APPLICATIONS ●DesignedprimarilyforUHFandVHFdetectorapplications.	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
MMBD452	文件：58.38 Kbytes Page：4 Pages	SURFACEMOUNTSCHOTTKYDIODE VOLTAGE30VoltsPOWER200mWatts FEATURES •LowCapacitance:1.5pF(Max)atVR=15V •VeryLowVF:0.36V(Typ)atIF=1mA •ExtremelyFastSwitchingSpeed •LeadfreeincomplywithEURoHS2011/65/EUdirectives. •GreenmoldingcompoundasperIEC61249Std..(HalogenFree) MECHANICALDATA	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT
MMBD452	文件：1.09964 Mbytes Page：2 Pages	DualHotCarrierMixerDiodes	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司	LUGUANG
MSMA452	文件：1.24862 Mbytes Page：39 Pages	MinasASeriesDigitalACServoMotors&Drivers	PanasonicPanasonic Corporation 松下松下电器	Panasonic
MUR452	文件：62.03 Kbytes Page：2 Pages	SUPERFASTRECTIFIER ReverseVoltage:50to600Volts ForwardCurrent:4.0Amperes FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 ▪Lowforwardvoltagedrop ▪Highcurrentcapability,Highreliability ▪Lowpowerloss,highefficiency ▪Highsurgecurrentcapability	JINGHENG Jinan Jing Heng Electronics Co., Ltd.	JINGHENG
MUR452G	文件：62.03 Kbytes Page：2 Pages	SUPERFASTRECTIFIER	JINGHENG Jinan Jing Heng Electronics Co., Ltd.	JINGHENG
NDT452	文件：92.94 Kbytes Page：6 Pages	P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription PowerSOTP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
NDT452	文件：227.54 Kbytes Page：10 Pages	P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription PowerSOTP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

<<<2 3 4 5 678 9 >>>

详细参数

型号：
F452
制造商：
ITF
制造商全称：
ITF
功能描述：
SAW Bandpass Filter

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	F452659GGGB	TI	00+	QFP	1921		询价
深圳市昌和盛利电子有限公司	F452659GGGB	TI/TEXAS	23+	QFP	8931		询价
深圳赋能华科电子有限公司	F452659GGGB	TI	22+	QFP	500	样品可出,优势库存欢迎实单	询价
深圳市英卓尔科技有限公司	F452659GGGB	TI	20+	QFP	500	样品可出,优势库存欢迎实单	询价
深圳市能元时代电子有限公司	F452659GGGB	TI	23+	QFP	31592	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳诚思涵科技有限公司	F452663APN	TI	16+	TQFP	712	进口原装现货/价格优势!	询价
深圳市振宏微科技有限公司	F452663APN	TI	23+	BGA	8659	原装公司现货!原装正品价格优势.	询价
中科航电(深圳)半导体技术有限公司	F452663APN			TQFP	712	100%原装正品!现货热价热卖!可开17%增值税票!	询价
深圳市博浩通科技有限公司	F4528BDM	F	23+	DIP	8890	价格优势/原装现货/客户至上/欢迎广大客户来电查询	询价
深圳市维尔达电子有限公司	F4528BDM	F	2023+	DIP	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价

更多F452供应商更新时间2024-6-10 16:30:00

详细参数

相关规格书

相关库存