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HSB276S

SiliconSchottkyBarrierDiode

Features ●Highforwardcurrent,Lowcapacitance. ●HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. ●CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

HSB276S

SiliconSchottkyBarrierDiodeforDetectorandMixer

Features •Highforwardcurrent,Lowcapacitance. •HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSB276S

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSB276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •CMPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

HSC276

SiliconSchottkyBarrierDiodeforMixer

Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi, Ltd.

日立公司

HSC276

HSC276_03

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSC276

SiliconSchottkyBarrierDiode

Features ●Highforwardcurrent,Lowcapacitance. ●UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

HSC276A

SiliconSchottkyBarrierDiodeforMixer

Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatLeadPackage(UFP)issuitableforsurfacemountdesign.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSC276A

SiliconSchottkyBarrierDiodeforMixer

Features •Highforwardcurrent,Lowcapacitance. •UltrasmallFlatPackage(UFP)issuitableforsurfacemountdesign.

HitachiHitachi, Ltd.

日立公司

HSD276A

SiliconSchottkyBarrierDiodeforDetector

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSD276A

SiliconSchottkyBarrierDiodeforDetector

HitachiHitachi, Ltd.

日立公司

HSL276A

SiliconSchottkyBarrierDiodeforDetector

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSM276AS

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSM276AS

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

HSM276ASR

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSM276ASR

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

HSM276S

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HSM276S

SiliconSchottkyBarrierDiode

Features ●Highforwardcurrent,Lowcapacitance. ●HSM276ASRwhichisinterconnectedinseriesconfiguration isdesignedforbalancedmixeruse. ●MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

HSM276S

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276Swhichisinterconnectedinseries configurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensity surfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

HSM276SR

SiliconSchottkyBarrierDiodeforBalancedMixer

Features •Highforwardcurrent,Lowcapacitance. •HSM276SRwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

HitachiHitachi, Ltd.

日立公司

HSM276SR

SiliconSchottkyBarrierDiode

Features •Highforwardcurrent,Lowcapacitance. •HSM276ASRwhichisinterconnectedinseriesconfigurationisdesignedforbalancedmixeruse. •MPAKpackageissuitableforhighdensitysurfacemountingandhighspeedassembly.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

供应商型号品牌批号封装库存备注价格
CHINA
22+
DIP8CSOP8
640
航宇科工半导体-央企合格优秀供方!
询价
23+
2013+
7300
专注配单,只做原装进口现货
询价
23+
2013+
7300
专注配单,只做原装进口现货
询价
O2
SSOP8
11
询价
N/A
2023+
SSOP8
50000
原装现货
询价
MB
22+
PLCC
2000
进口原装!现货库存
询价
23+
N/A
85900
正品授权货源可靠
询价
S
2017+
CDIP
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
NEC
23+
31720
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
原厂
23+
SOP
5000
原装正品,假一罚十
询价
更多F-276X供应商 更新时间2024-5-25 8:00:00