| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET FEATURES •Isolatedpackage •Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) •Sinktoleadcreepagedistance=4.8mm •P-channel •DynamicdV/dtrating •Lowthermalresistance •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESC | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMOSFET Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialap | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
PrecisionBulkhead2.4mmFemaleto2.4mmFemaleAdapter | PASTERNACKPasternack Enterprises, Inc. 帕斯特纳克 | PASTERNACK | ||
CDDIGITALSERVOSIGNALPROCESSORWITHMCU(SLAVEMODE) | SILANSilan 士兰 | SILAN | ||
AdvancedPowerMOSFET BVDSS=-200V RDS(on)=0.5W ID=-11A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10mA(Max.)@VDS=-200V ●LowRDS(ON):0.344W(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET BVDSS=-200V RDS(on)=0.5W ID=-11A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:-10mA(Max.)@VDS=-200V ●LowRDS(ON):0.344W(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET BVDSS=-200V RDS(on)=0.5Ω ID=-11A FEATURES ❑AvalancheRuggedTechnology ❑RuggedGateOxideTechnology ❑LowerInputCapacitances ❑ImprovedGateCharge ❑ExtendedSafeOperatingArea ❑LowerLeakageCurrent:-10uA(Max.)@VDS=-200V ❑LowerRDS(ON):0.383Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10mA(Max.)@VDS=-200V ■LowRDS(ON):0.344Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET BVDSS=-200V RDS(on)=0.5W ID=-11A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10mA(Max.)@VDS=-200V ●LowRDS(ON):0.344W(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinform | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinform | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ETA钰泰 |
23+ |
20000 |
原装现货,可追溯原厂渠道 |
询价 | |||
求购IC |
2016+ |
ESOP8 |
5083 |
询价 | |||
钰泰ETA |
2020+ |
ESOP8 |
30000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ETA |
2019+ |
ESOP-8 |
357500 |
ETA原装正品假一赔十 |
询价 | ||
23+ |
N/A |
12850 |
正品授权货源可靠 |
询价 | |||
23+ |
ESOP8 |
20000 |
原厂原装正品现货 |
询价 | |||
ETA |
23+ |
SOP-8 |
2000 |
原装现货 |
询价 | ||
回收IC |
21+ |
ESOP8 |
35210 |
一级代理/全新现货/假一罚百! |
询价 | ||
ETA/钰泰 |
20+ |
SSOP |
500 |
ETA/钰泰 ETA9640 SSOP 20+ |
询价 | ||
ETA/钰泰 |
2022+ |
原厂封装 |
95000 |
100%进口原装正品现货,公司原装现货众多欢迎加微信咨 |
询价 |
相关规格书
更多- ETA9640E8A
- ETA9686D3M
- ETA9687E8A
- ETA9688D3M
- ETA9689D3M
- ETA9740E8A
- ETA9742E8A
- ETAD-F0335
- ETAD-F0353
- ET-AMS1085M-XX
- ETB01
- ETB01070B100Z
- ETB01070G100Z
- ETB01070K100Z
- ETB01071B100Z
- ETB01071G100Z
- ETB01071K100Z
- ETB01080B100Z
- ETB01080G100Z
- ETB01080K100Z
- ETB01081B100Z
- ETB01081G100Z
- ETB01081K100Z
- ETB01-8P
- ETB03
- ETB05150B000Z
- ETB05150G000Z
- ETB05150K000Z
- ETB05151B000Z
- ETB05151G000Z
- ETB05151K000Z
- ETB05200B000Z
- ETB05200G000Z
- ETB05200K000Z
- ETB05201B000Z
- ETB05201G000Z
- ETB05201K000Z
- ETB05260B000Z
- ETB05260G000Z
- ETB05260K000Z
- ETB05261B000Z
- ETB05261G000Z
- ETB05261K000Z
- ETB06
- ETB06150B100Z
相关库存
更多- ETA9686
- ETA9687
- ETA9688
- ETA9689
- ETA9740
- ETA9742
- ETAD-F0324
- ETAD-F0345
- ET-AMS1084M-XX
- ET-AMS1086M-XX
- ETB01070B000Z
- ETB01070G000Z
- ETB01070K000Z
- ETB01071B000Z
- ETB01071G000Z
- ETB01071K000Z
- ETB01080B000Z
- ETB01080G000Z
- ETB01080K000Z
- ETB01081B000Z
- ETB01081G000Z
- ETB01081K000Z
- ETB01-7P
- ETB02
- ETB05
- ETB05150B100Z
- ETB05150G100Z
- ETB05150K100Z
- ETB05151B100Z
- ETB05151G100Z
- ETB05151K100Z
- ETB05200B100Z
- ETB05200G100Z
- ETB05200K100Z
- ETB05201B100Z
- ETB05201G100Z
- ETB05201K100Z
- ETB05260B100Z
- ETB05260G100Z
- ETB05260K100Z
- ETB05261B100Z
- ETB05261G100Z
- ETB05261K100Z
- ETB06150B000Z
- ETB06150G000Z
