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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
EMH2801	文件：366.73 Kbytes Page：5 Pages	SBD : Schottky Barrier Diode General-Purpose Switching Device Applications MOSFET:P-ChannelSiliconMOSFET SBD:SchottkyBarrierDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smallswitching	SANYOSanyo 三洋三洋电机株式会社	SANYO
EMH2801	文件：660.08 Kbytes Page：8 Pages	P-Channel Power MOSFET P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smal	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
EMH2801-TL-H	文件：660.08 Kbytes Page：8 Pages	P-Channel Power MOSFET P-ChannelPowerMOSFET –20V,–3A,85mΩ,SingleEMH8withSchottkyDiode Features •CompositetypewithaP-ChannelSilliconMOSFETandaSchottkyBarrierDiodecontainedinonepackagefacilitatinghigh-densitymounting •[MOSFET] •LowON-resistance •1.8Vdrive •[SBD] •Smal	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
2801	文件：371.41 Kbytes Page：2 Pages	42MHzsurfacemountbandpassfilter GeneralDescription KR2801isa42MHzsurfacemountbandpassfilter.Thefilterhasaminimum3dBbandwidthof4MHz.Otherpassbandfrequenciesareavailable.Pleaseconsultthefactory. Features •42MHzCenterFrequency •SurfaceMountPackage •50ΩSourceandLoad	KRKR Electronics, Inc. KR Electronics, Inc.	KR
2801P-R-ST	文件：103.9 Kbytes Page：2 Pages	MultimodeCATVTransport	EMCORE Emcore Corporation	EMCORE
2801P-R-ST	文件：159.88 Kbytes Page：2 Pages	2801PRO5ChannelMultimodeCATVVSB/AMVideoLink	EMCORE Emcore Corporation	EMCORE
2801P-R-ST	文件：235.12 Kbytes Page：2 Pages	MultimodeCATVVSB/AM	EMCORE Emcore Corporation	EMCORE
2801-SMA	文件：63.72 Kbytes Page：2 Pages	42MHzCenterFrequency	KRKR Electronics, Inc. KR Electronics, Inc.	KR
AAT2801	文件：747.28 Kbytes Page：20 Pages	Multi-ModeChargePumpforWhiteLEDBacklightandFlashApplications	ANALOGICTECHAdvanced Analogic Technologies 研诺科技研诺逻辑科技有限公司	ANALOGICTECH
ACT2801	文件：2.43542 Mbytes Page：25 Pages	5V/1.5ABackupBatteryPackManager	ACTIVE-SEMI Active-Semi International Inc.	ACTIVE-SEMI
ACT2801	文件：614.48 Kbytes Page：23 Pages	5V/1.5ABackupBatteryPackManager	ACTIVE-SEMI Active-Semi International Inc.	ACTIVE-SEMI
ACT2801CQL-T	文件：614.48 Kbytes Page：23 Pages	5V/1.5ABackupBatteryPackManager	ACTIVE-SEMI Active-Semi International Inc.	ACTIVE-SEMI
AON2801	文件：176.93 Kbytes Page：5 Pages	DualP-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAON2801/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. AON2801andAON2801Lareelectricallyidentical. -RoHSCompli	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
APM2801B	文件：607.21 Kbytes Page：11 Pages	P-ChannelEnhancementModeMOSFETwithSchottkyDiode Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE	ANPECAnpec Electronics Corp 茂达电子	ANPEC
APM2801BC-TR	文件：607.21 Kbytes Page：11 Pages	P-ChannelEnhancementModeMOSFETwithSchottkyDiode Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE	ANPECAnpec Electronics Corp 茂达电子	ANPEC
APM2801BC-TRL	文件：607.21 Kbytes Page：11 Pages	P-ChannelEnhancementModeMOSFETwithSchottkyDiode Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE	ANPECAnpec Electronics Corp 茂达电子	ANPEC
APM2801BC-TU	文件：607.21 Kbytes Page：11 Pages	P-ChannelEnhancementModeMOSFETwithSchottkyDiode Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE	ANPECAnpec Electronics Corp 茂达电子	ANPEC
APM2801BC-TUL	文件：607.21 Kbytes Page：11 Pages	P-ChannelEnhancementModeMOSFETwithSchottkyDiode Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE	ANPECAnpec Electronics Corp 茂达电子	ANPEC
ASIKV2801	文件：16.97 Kbytes Page：1 Pages	SILICONHYPERABRUPTTUNINGVARACTOR	ASI Advanced Semiconductor, Inc	ASI
BGA2801	文件：552.63 Kbytes Page：18 Pages	MMICwidebandamplifier	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp

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详细参数

型号：
EMH2801
制造商：
SANYO
制造商全称：
Sanyo Semicon Device
功能描述：
SBD
：
Schottky Barrier Diode General-Purpose Switching Device Applications

供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	EMH2801	ON/安森美	21+ROHS	SOT-383FLEMH-8	2000000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市深创辉科技有限公司	EMH2801-TL-H	ON	11+		2800	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
深圳市纳立科技有限公司	EMH2801-TL-H		三年内		1983	纳立只做原装正品13590203865	询价
深圳市凯盛恒创科技有限公司	EMH2801-TL-H	ON		最新	2800	原装正品现货供应价格优	询价
深圳市航润创能电子集团有限公司	EMH2801-TL-H	ON	21+	8-EMH	2929	原装现货假一赔十	询价
深圳市达恩科技有限公司	EMH2801-TL-H	ON	21+	NA	3000	进口原装假一罚十现货	询价
深圳市振芯物联科技有限公司	EMH2801-TL-H	ON	22+	8-EMH	32350	原装正品假一罚十公司现货	询价
深圳市恒意法电子有限公司	EMH2801-TL-H	onsemi	21+	SC-75,SOT-416	21000	专业分立半导体,原装渠道正品现货	询价
深圳市振鑫微电子科技有限公司	EMH2801-TL-H	ON	23+		589610	新到现货原厂一手货源价格秒杀代理!	询价
深圳市河锋鑫科技有限公司	EMH2801TLH	ON Semiconductor	22+	8SMD Flat Lead	9000	原厂渠道,现货配单	询价

更多EMH2801供应商更新时间2024-5-28 11:10:00

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