零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
FastSwitchingSpeed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,69A,RDS(ON)=11mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,69A,RDS(ON)=11mW@VGS=10V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=45A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.023Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FQH70N10100VN-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.039Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
57A,100VHeatsinkPlanarN-ChannelPowerMOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply. Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220 | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=57A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.023Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainSourceVoltage :VDSS=100V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=70A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
EMC-义隆 |
24+25+/26+27+ |
TO-252-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ROHM |
23+ |
EMT6 |
999999 |
原装正品现货量大可订货 |
询价 | ||
ROHM |
19+ |
EMT6 |
20000 |
6900 |
询价 | ||
ROHM |
23+ |
EMT6 |
20000 |
原厂原装正品现货 |
询价 | ||
ROHM |
21+ |
SOT-563 |
21000 |
一级代理进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
ROHM/罗姆 |
2021+ |
SOT563 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ROHM/罗姆 |
22+ |
SOT563 |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
询价 | ||
ROHM/罗姆 |
2014 |
EMT6 |
5000 |
主营ROHM数字晶体管可开增值票 |
询价 | ||
ROHM/罗母 |
2018+ |
SOT-563 |
600000 |
罗母授权代理/公司可开正规17%增值税票 |
询价 | ||
ROHM/罗姆 |
24+ |
EMT6 |
860000 |
明嘉莱只做原装正品现货 |
询价 |
相关规格书
更多- EMIF01-10005W5
- EMIF02-600
- EN29F040-70J
- EOC88104FOM
- EP1800LC
- EP1810JC-45
- EP1810LC-25T
- EP1810LC-35T
- EP1C12F256C8
- EP1C12F256I7
- EP1C12F324C8N
- EP1C12Q240C6
- EP1C12Q240C8
- EP1C12Q240I7
- EP1C20F324C8
- EP1C20F400C6
- EP1C20F400C8
- EP1C3T100C8
- EP1C3T144C6
- EP1C3T144C8N
- EP1C4F324C7
- EP1C4F324C8N
- EP1C4F400C8N
- EP1C6F256C8N
- EP1C6Q240C6
- EP1C6Q240C8N
- EP1C6T144C8
- EP1K100FC256-1
- EP1K100FC256-3
- EP1K100FC484-2
- EP1K100FI256-2
- EP1K100QC208-1
- EP1K100QC208-3
- EP1K10FC256-3
- EP1K10QC208-3
- EP1K10TC144-1
- EP1K30FC256-3
- EP1K30QC208-1
- EP1K30QC208-3
- EP1K30TC144-1
- EP1K30TC144-3
- EP1K50FC256-1
- EP1K50FC256-3
- EP1K50FC484-2
- EP1K50FI256-2
相关库存
更多- EMIF01-5250SC5
- EN29F002NT-70J
- ENW54D01H
- EP1284-01
- EP1810JC-35
- EP1810LC-20
- EP1810LC-35
- EP1810LC-45
- EP1C12F256C8N
- EP1C12F324C8
- EP1C12F324I7
- EP1C12Q240C7
- EP1C12Q240C8N
- EP1C20F324C7
- EP1C20F324I7
- EP1C20F400C7
- EP1C20F400I7
- EP1C3T100I7
- EP1C3T144C8
- EP1C3T144I7
- EP1C4F324C8
- EP1C4F400C8
- EP1C6F256C8
- EP1C6F256I7
- EP1C6Q240C8
- EP1C6Q240I7
- EP1C6T144I7
- EP1K100FC256-2
- EP1K100FC484-1
- EP1K100FC484-3
- EP1K100FI484-2
- EP1K100QC208-2
- EP1K100QI208-2
- EP1K10QC208-2
- EP1K10TC100-3
- EP1K10TC144-3
- EP1K30FI256-2
- EP1K30QC208-2
- EP1K30QI208-2
- EP1K30TC144-2
- EP1K30TI144-2
- EP1K50FC256-2
- EP1K50FC484-1
- EP1K50FC484-3
- EP1K50QC208-1