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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
HAF1009	文件：113.11 Kbytes Page：10 Pages	SiliconPChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
HAF1009L	文件：113.11 Kbytes Page：10 Pages	SiliconPChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
HAF1009S	文件：113.11 Kbytes Page：10 Pages	SiliconPChannelMOSFETSeriesPowerSwitching Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
HPR1009	文件：134.53 Kbytes Page：4 Pages	1.0WATTUNREGULATEDSIPDC/DCCONVERTER DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola	CANDD C&D Technologies	CANDD
HPR1009	文件：46.98 Kbytes Page：4 Pages	1.0WATTUNREGULATEDSIPDC/DCCONVERTER DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola	CANDD C&D Technologies	CANDD
HPR1009C	文件：179.2 Kbytes Page：4 Pages	1.0WATTUNREGULATED,SIPDC/DCCONVERTER DESCRIPTION TheHPR10XXCSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXCSerieswithhighfrequencyiso	MURATA-PSMurata Power Solutions Inc. 村田村田制作所	MURATA-PS
IPT-1009	文件：96.18 Kbytes Page：2 Pages	ICReferenceDesignTransformers	ICE ice Components, Ins.	ICE
IS-1009RH	文件：79.67 Kbytes Page：2 Pages	RadiationHardened2.5VReference	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
IS-1009RH	文件：92.97 Kbytes Page：2 Pages	RadiationHardened2.5VReference	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
ISF1009	文件：342.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainSourceVoltage :VDSS=60V(Min) ·LowRDS(ON) ·FastSwitchingSpeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·DesignedforSwitchedModePowerSupplies(SMPS), motorcontrol,welding,andingeneralpurposeswitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ISLT1009	文件：842.3 Kbytes Page：11 Pages	SwitchingModePowerSupply	ISOCOM Isocom Components 2004 LTD	ISOCOM
ISYE-1009RH/PROTO	文件：92.97 Kbytes Page：2 Pages	RadiationHardened2.5VReference	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
ISYE-1009RH/PROTO	文件：79.67 Kbytes Page：2 Pages	RadiationHardened2.5VReference	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
ISYE-1009RH-Q	文件：92.97 Kbytes Page：2 Pages	RadiationHardened2.5VReference	IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社	Intersil
KAS1009	文件：165.99 Kbytes Page：4 Pages	AC-DCPOWERMODULE10WSINGLEOUTPUT	CHINFA Chinfa Electronics Ind. Co., Ltd.	CHINFA
KSC1009	文件：37.62 Kbytes Page：4 Pages	HighVoltageAmplifier HighVoltageAmplifier •HighCollector-BaseVoltage:VCBO=160V •CollectorCurrent:IC=700mA •CollectorPowerDissipation:PC=800mW •ComplementtoKSA709 •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
KSC1009	文件：70.63 Kbytes Page：2 Pages	NPN(HIGHVOLTAGEAMPLIFIER) HIGHVOLTAGEAMPLIFIER •HighCollector-BaseVoltageVCBO=160V •CollectorCurrentIC=700mA •CollectorPowerDissipationPC=800mW •ComplementtoKSA709	SamsungSamsung Group 三星三星半导体	Samsung
KSC1009CYBU	文件：37.62 Kbytes Page：4 Pages	HighVoltageAmplifier HighVoltageAmplifier •HighCollector-BaseVoltage:VCBO=160V •CollectorCurrent:IC=700mA •CollectorPowerDissipation:PC=800mW •ComplementtoKSA709 •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
KSC1009CYTA	文件：37.62 Kbytes Page：4 Pages	HighVoltageAmplifier HighVoltageAmplifier •HighCollector-BaseVoltage:VCBO=160V •CollectorCurrent:IC=700mA •CollectorPowerDissipation:PC=800mW •ComplementtoKSA709 •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
KSC1009G	文件：37.62 Kbytes Page：4 Pages	HighVoltageAmplifier HighVoltageAmplifier •HighCollector-BaseVoltage:VCBO=160V •CollectorCurrent:IC=700mA •CollectorPowerDissipation:PC=800mW •ComplementtoKSA709 •Suffix“-C”meansCenterCollector(1.Emitter2.Collector3.Base)	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
EMD1009
制造商：
Honeywell Sensing and Control
功能描述：
GENERAL MARKET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	EMD-100L-LF-T3	PROTEK/普罗太克	23+	BGA	50000	全新原装正品现货,支持订货	询价
深圳市汇莱威科技有限公司	EMD-100L-LF-T3		PROTEK	BGA	68900	原包原标签100%进口原装常备现货!	询价
深圳廊盛科技有限公司	EMD-100L-LF-T3	PROTEK/普罗太克	22+	BGA	50000	只做原装假一罚十,欢迎咨询	询价
深圳市特莱科技有限公司	EMD-100L-LF-T3	PROTEK/普罗太克	24+23+	BGA	12580	16年电子元件现货供应商终端BOM表可配单提供样品	询价
深圳市得捷芯城科技有限公司	EMD-100L-LF-T3	PROTEK/普罗太克	23+	NA/	9250	原装现货,当天可交货,原型号开票	询价
深圳市科恒伟业电子有限公司	EMD-108		2017+	SMD	1585	只做原装正品假一赔十!	询价
千层芯半导体(深圳)有限公司	EMD-108	QORVO	2018+	SMD	5000	QORVO“芯达集团”专营品牌原装正品假一罚十	询价
深圳市湘达电子科技有限公司	EMD-108	M/A-COM	22+	NA	12800	只做原装,价格优惠,长期供货。	询价
深圳市英瑞芯科技有限公司	EMD-108	M/A-COM		NA	8600	原装正品,欢迎来电咨询!	询价
深圳市瑞祥辉半导体有限公司	EMD-108	M/A-COM	2318+	原装正品	4285	十年专业专注优势渠道商正品保证	询价

更多EMD1009供应商更新时间2024-5-31 13:42:00

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