首页 >EFC6618R-TF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | |||
LowOn-resistance,FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule | ANADIGICS ANADIGICS | |||
DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl | STANFORDStanford Microdevices Stanford Microdevices | |||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZASIRENZA 圆通微波上海圆通微波电子有限公司 | |||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | |||
DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren | RFMD RF Micro Devices | |||
DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle | SIRENZASIRENZA 圆通微波上海圆通微波电子有限公司 | |||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTM 勤益投資控股股份有限公司 | |||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
integratedUSBType-C | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | |||
HEXFETPowerMOSFET Description TheIRF6618combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DirectFET짰PowerMOSFET짰 Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IdealforCPUCoreDC-DCConverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IdealforCPUCoreDC-DCConverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
DirectFET짰PowerMOSFET짰 Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerWise짰130MHz,1.25mARRIOOperationalAmplifiers | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | |||
130MHz,1.25mARRIOOperationalAmplifiers | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
36500 |
正品授权货源可靠 |
询价 | |||
ON/安森美 |
21+ |
WLCSP6 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON/安森美 |
23+ |
WLCSP6 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON/安森美 |
16+15+ |
WLCSP6 |
8494 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON/安森美 |
22+ |
WLCSP6 |
10000 |
正规渠道,只有原装! |
询价 | ||
ON |
2320+ |
BGA |
562000 |
16年只做原装原标渠道现货终端BOM表可配单提供样品 |
询价 | ||
ON/安森美 |
16+15+ |
WLCSP6 |
8494 |
只做原装,也只有原装! |
询价 | ||
ON/安森美 |
2023+ |
WLCSP6 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
ON/安森美 |
2023+ |
WLCSP6 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
EFC |
22+ |
SOP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 |
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