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A6618

CMOSLOWDROPOUTREGULATOR(LDO)600mAADJUSTABLE,ULTRA-LOWNOISE,ULTRA-FAST

DESCRIPTION A6618 seriesisagroupofpositivevoltageoutput, lowpowerconsumption,lowdropoutvoltage regulator. A6618 canprovideoutputvalueadjustablefrom0.8V to5.0V. A6618 includeshighaccuracyvoltagereference, erroramplifier,currentlimitcircuitandoutputdriver mod

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

AITSEMI

AP6618GM-HF

LowOn-resistance,FastSwitchingCharacteristic

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

AWU6618

HELP3EDual-bandIMT&EGSMWCDMA3.4VLinearPowerAmplifierModule

ANADIGICS

ANADIGICS

ANADIGICS

CGA-6618

DUALCATVBROADBANDHIGHLINEARITYGAASHBTAMPLIFIER

ProductDescription StanfordMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesl

STANFORDStanford Microdevices

Stanford Microdevices

STANFORD

CGA-6618

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZASIRENZA

圆通微波上海圆通微波电子有限公司

SIRENZA

CGA-6618

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

RFMD

CGA-6618Z

DUALCATV1MHzto1000MHzHIGHLINEARITYGaAsHBTAMPLIFIER

ProductDescription RFMD’sCGA-6681(Z)isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesleakagecurren

RFMD

RF Micro Devices

RFMD

CGA-6618Z

DualCATV1MHzto1000MHzHighLinearityGaAsHBTAmplifier

ProductDescription SirenzaMicrodevice’sCGA-6618isahighperformanceGaAsHBTMMICAmplifier.DesignedwiththeInGaPprocesstechnologyforexcellentreliability.ADarlingtonconfigurationisutilizedforbroadbandperformance.Theheterojunctionincreasesbreakdownvoltageandminimizesle

SIRENZASIRENZA

圆通微波上海圆通微波电子有限公司

SIRENZA

GSC6618

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTM

勤益投資控股股份有限公司

GTM

HM6618A

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

HM6618B

integratedUSBType-C

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

华之美半导体深圳市华之美半导体有限公司

HMSEMI

IRF6618

HEXFETPowerMOSFET

Description TheIRF6618combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF6618

PowerMOSFET

Description TheIRF6609combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofanSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutge

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF6618PBF

DirectFET짰PowerMOSFET짰

Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF6618PBF

IdealforCPUCoreDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF6618TRPBF

IdealforCPUCoreDC-DCConverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF6618TRPBF

DirectFET짰PowerMOSFET짰

Description TheIRF6618PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

LMH6618

PowerWise짰130MHz,1.25mARRIOOperationalAmplifiers

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

LMH6618

130MHz,1.25mARail-to-RailInputandOutputOperationalAmplifierwithShutdown

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

LMH6618

130MHz,1.25mARRIOOperationalAmplifiers

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

TI1
供应商型号品牌批号封装库存备注价格
23+
N/A
36500
正品授权货源可靠
询价
ON/安森美
21+
WLCSP6
50000
全新原装正品现货,支持订货
询价
ON/安森美
23+
WLCSP6
50000
全新原装正品现货,支持订货
询价
ON/安森美
16+15+
WLCSP6
8494
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ON/安森美
22+
WLCSP6
10000
正规渠道,只有原装!
询价
ON
2320+
BGA
562000
16年只做原装原标渠道现货终端BOM表可配单提供样品
询价
ON/安森美
16+15+
WLCSP6
8494
只做原装,也只有原装!
询价
ON/安森美
2023+
WLCSP6
700000
柒号芯城跟原厂的距离只有0.07公分
询价
ON/安森美
2023+
WLCSP6
8800
正品渠道现货 终端可提供BOM表配单。
询价
EFC
22+
SOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
更多EFC6618R-TF供应商 更新时间2024-4-27 11:36:00