ECE116资料使用说明书贸易商三洋LSTD第5页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
BAS116-AU	文件：335.38 Kbytes Page：5 Pages	SURFACEMOUNT,LOWLEAKAGESWITCHINGDIODES VOLTAGE100VoltsPOWER250mWatts FEATURES •Sufacemountpackageideallysuitedforautomaticinsertion. •Verylowleakagecurrent.2pAtypicalatVR=75V. •Lowcapacitance.2pFmaxatVR=0V,f=1MHz •Acqirequalitysystemcertificate:TS16949 •AEC-Q101qualified •Leadfreeincomplyw	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT
BAS116DY	文件：207.32 Kbytes Page：9 Pages	Low-leakagedualswitchingdiode 1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolateddualdiodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:maximum5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxi	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BAS116DY-Q	文件：207.19 Kbytes Page：9 Pages	Low-leakagedualswitchingdiode 1.Generaldescription Epitaxial,medium-speedswitching,electricallyisolateddualdiodeinanultrasmallSOT363 Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Lowleakagecurrent:maximum5nA •Switchingtime:typical0.8μs •Continuousreversevoltage:maxi	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BAS116GW	文件：207.58 Kbytes Page：11 Pages	Lowleakageswitchingdiode	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BAS116H	文件：804.6 Kbytes Page：10 Pages	Lowleakageswitchingdiode 1.1Generaldescription Lowleakageswitchingdiode,encapsulatedinaSOD123Fsmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits SmallandflatleadSMDplasticpackage Lowleakagecurrent Excellentcoplanarityandimprovedthermalbehavior	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BAS116H	文件：51.47 Kbytes Page：9 Pages	75V,lowleakagediodeinsmallSOD123Fpackage Generaldescription Lowleakageswitchingdiode,encapsulatedinaSOD123FsmallSMDplasticpackage. Features ■SmallandflatleadSMDplasticpackage ■Lowleakagecurrent Applications ■General-purposeswitching	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BAS116HM	文件：1.05113 Mbytes Page：6 Pages	SwitchingDiode	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
BAS116HMFH	文件：1.05161 Mbytes Page：6 Pages	SwitchingDiode	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
BAS116HY	文件：1.48135 Mbytes Page：8 Pages	SwitchingDiode(Lowleakage) Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
BAS116HYFH	文件：1.48155 Mbytes Page：8 Pages	SwitchingDiode(Lowleakage) Features Highreliability Smallmoldtype LowIR Application Generalswitching Structure Epitaxialplanar	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
BAS116L	文件：679.54 Kbytes Page：12 Pages	Low-leakagediode	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BAS116L	文件：83.2 Kbytes Page：4 Pages	SwitchingDiode Features •LowLeakageCurrentApplications •MediumSpeedSwitchingTimes •Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 Q	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
BAS116LS	文件：218.95 Kbytes Page：10 Pages	Low-leakagediode 1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BAS116LS-Q	文件：219.22 Kbytes Page：10 Pages	Low-leakagediode 1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Switchingtime:max.trr=3μs •Lowleakagecurrent:max.IR=5nA •Repetitivepeakreversevolt	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BAS116QA	文件：687.94 Kbytes Page：12 Pages	Low-leakagediode	NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司	NEXPERIA
BAS116RF	文件：68.48 Kbytes Page：2 Pages	225mWSMDSwitchingDiode FEATURES -Lowpowerloss,highcurrentcapability,lowVF -Surfacedevicetypemounting -Moisturesensitivitylevel1 -MatteTin(Sn)leadfinishwithNickel(Ni)underplate -PbfreeversionandRoHScompliant -PackingcodewithsuffixGmeansgreencompound(halogen-free) MECHANICAL	TSCTaiwan Semiconductor Company, Ltd 台半台湾半导体股份有限公司	TSC
BAS116RFG	文件：206.57 Kbytes Page：4 Pages	225mW,SMDSwitchingDiode	TSCTaiwan Semiconductor Company, Ltd 台半台湾半导体股份有限公司	TSC
BAS116T	文件：82.22 Kbytes Page：3 Pages	SURFACEMOUNTLOWLEAKAGEDIODE Features •Ultra-SmallSurfaceMountPackage •VeryLowLeakageCurrent •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)	DIODESDiodes Incorporated 达尔科技	DIODES
BAS116T	文件：76.66 Kbytes Page：3 Pages	SURFACEMOUNTLOWLEAKAGEDIODE	DIODESDiodes Incorporated 达尔科技	DIODES
BAS116T	文件：55.06 Kbytes Page：3 Pages	SURFACEMOUNTLOWLEAKAGEDIODE Features ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability	DIODESDiodes Incorporated 达尔科技	DIODES

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供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿国际（香港）有限公司	ECE1200-I/LD	MICROCHIP(美国微芯)	2112+	VQFN-40	31500	490个/托盘一级代理专营品牌!原装正品,优势现货,长	询价
深圳市大源实业科技有限公司	ECE1200-I/LD	Microchip	22+	QFN-40	262269	优势价格原装现货提供BOM一站式配单服务	询价
讯运(深圳/上海)电子有限公司	ECE1200-I/LD	MICROCHIP(美国微芯)	2021+	VQFN-40	499		询价
深圳市恒意法电子有限公司	ECE1200-I/LD	Microchip Technology	21+	40-VQFN(5x5)	6000	正规渠道/品质保证/原装正品现货	询价
深圳市珩瑞科技有限公司	ECE1200-I/LD	Microchip	21+	QFN-40	10000	原装,品质保证,请来电咨询	询价
深圳市星佑电子有限公司	ECE1200-I/LD	Microchip	21+	QFN-40	10000	原装,品质保证,请来电咨询	询价
深圳市河锋鑫科技有限公司	ECE1200-I/LD	Microchip	2021+	QFN-40	7600	原装现货，欢迎询价	询价
深圳市富利微电子科技有限公司	ECE1200-I/LD	Microchip	23+	QFN-40	30000	原装正品公司现货,假一赔十!	询价
深圳市斌能达电子科技有限公司	ECE1200-I/LD	Microchip	2023+	QFN-40	6000	全新原装深圳仓库现货有单必成	询价
深圳市鑫炜纳电子有限公司	ECE1200-I/LD	Microchip	2022+	QFN-40	7600	原厂原装,假一罚十	询价

更多ECE116供应商更新时间2024-6-18 15:00:00

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