首页 >EC4406C-TL-H>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
30VN-ChannelMOSFET GeneralDescription TheAO4406AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforhighsideswitchinSMPSandgeneralpurposeapplications. ProductSummary VDS30V ID(atVGS=10V)13A RDS(ON)(atVGS=10V) | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
TheA4406isanautomotivepowermanagementICthatusesahighfrequencyconstanton-time5.45Vpre-regulatortosupplyaninternal5Vlinearregulatoranda3.3VlinearDMOSdriver. Description TheA4406isanautomotivepowermanagementICthatusesahighfrequencyconstanton-time5.45Vpre-regulatortosupplyaninternal5Vlinearregulatoranda3.3VlinearDMOSdriver.DesignedtosupplyCANandmicroprocessorpowersuppliesinhightemperatureenvironments,theA | Allegro Allegro MicroSystems | Allegro | ||
2-PHASEHALF-WAVEHIGHVOLTAGEMOTORPRE-DRIVER | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
2-PHASEHALF-WAVEHIGHVOLTAGEMOTORPRE-DRIVER | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
2-PHASEHALF-WAVEHIGHVOLTAGEMOTORPRE-DRIVER | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | BCDSEMI | ||
N-CHANNELENHANCEMENTMODEMOSFET DESCRIPTION TheAM4406isavailableinSOP8Package FEATURES 30V/12A, RDS(ON)=11.5mΩ(max.)@VGS=10V RDS(ON)=15.5mΩ(max.)@VGS=4.5V ReliableandRugged AvailableinSOP8Package APPLICATION PowerManagementinNotebookComputer, PortableEquipmentandBatteryPowered Sy | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
2-PHASEHALF-WAVEHIGHVOLTAGEMOTORPRE-DRIVER | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
2-PHASEHALF-WAVEHIGHVOLTAGEMOTORPRE-DRIVER | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | BCDSEMI | ||
newSTsuper-junctiontechnologyidealforresonanttopologies | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=11.5A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
NCHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR GeneralDescription TheAO4406usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdevicemakesanexcellenthighsideswitchfornotebookCPUcoreDC-DCconversion. Features VDS(V)=30V ID=11.5A RDS(ON) | ALPHA ALPHA Semiconductor | ALPHA | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4406/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas2.5V.ThisdevicemakesanexcellenthighsideswitchfornotebookCPUcoreDC-DCconversion.AO4406andAO4406Lareelectricallyidentical. | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
30VN-ChannelMOSFET GeneralDescription TheAO4406AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforhighsideswitchinSMPSandgeneralpurposeapplications. ProductSummary VDS30V ID(atVGS=10V)13A RDS(ON)(atVGS=10V) | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
30VN-ChannelMOSFET GeneralDescription TheAO4406AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforhighsideswitchinSMPSandgeneralpurposeapplications. ProductSummary VDS30V ID(atVGS=10V)13A RDS(ON)(atVGS | WHXPCBshenzhen wanhexing Electronics Co.,Ltd 万和兴电子深圳万和兴电子有限公司 | WHXPCB | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=13A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronousRectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
11N06C30VN-ChannelEnhancementModeMOSFET GeneralFeaturesVDS=30VID=12A RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=13A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO4406ALusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforhighsideswitchinSMPSandgeneralpurposeapplications. Features VDS(V)=30V ID=12A(VGS=10V) RDS(ON) | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD |
详细参数
- 型号：
EC4406C-TL-H
- 功能描述：
MOSFET N-CH 60V 0.2A ESCP1008-4
- RoHS：
是
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
-
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Sanyo |
23+ |
ESCP1008-4 |
7750 |
全新原装优势 |
询价 | ||
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | ||||
ON |
2021 |
N/A |
6000 |
询价 | |||
SANYO |
ECSP1208-4F |
11757 |
询价 | ||||
DIODES |
23+ |
DFN |
9000 |
原装正品,假一罚十 |
询价 | ||
SANYO |
22+23+ |
ECSP1208-4F |
29497 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
SANYO |
23+ |
ECSP1208-4F |
999999 |
原装正品现货量大可订货 |
询价 | ||
SANYO |
6000 |
面议 |
19 |
ECSP1208-4F |
询价 | ||
SANYO |
19+ |
ECSP1208- |
20000 |
35963 |
询价 | ||
SANYO |
23+ |
ECSP1208- |
20000 |
原厂原装正品现货 |
询价 |
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