EAB450M12XM3中文资料WOLFSPEED规格书PDF资料数据手册-114ic电子网

EAB450M12XM3中文资料PDF规格书

厂商型号	EAB450M12XM3
功能描述	Automotive Qualified 1200 V, 450 A All-Silicon Carbide Conduction-Optimized, Half-Bridge Module
文件大小	1.08291 Mbytes
页面数量	11 页
生产厂商	WOLFSPEED, INC.
企业简称	WOLFSPEED
中文名称	WOLFSPEED, INC.官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2024-4-29 13:35:00

Technical Features

• High Power Density Footprint

• High Junction Temperature (175 °C) Operation

• Low Inductance (6.7 nH) Design

• Implements Conduction Optimized Third

Generation SiC MOSFET Technology

• Silicon Nitride Insulator and Copper Baseplate

VDS 1200 V

IDS 450 A

System Benefits

• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,

low inductance design.

• Isolated integrated temperature sensing enables high-level temperature protection.

• Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.

Applications

• Motor & Traction Drives

• Vehicle Fast Chargers

• Automotive Test Equipment