1.0 Features

• 650V, 90mΩenhancement mode power HEMT

• Adapt to various PWM controllers

• Zero reverse recovery

• Adjustable turn-on slew rate

• High switching frequency (>2MHz)

• Reverse conduction capable

• Enhanced thermal performance with NC center pad

• Simple and low cost interface circuit

• Direct PWM drive, no external VCC needed

2.0 Topologies and Applications

• As switching FETs in singles, or in pairs as half-bridges

• AC-DC, DC-DC, DC-AC converters

• PFC applications (Standard and Totem pole)

• High frequency LLC converters

• Mobile chargers and laptop adapters

• LED and motor drives

• Server power supplies

3.0 Description

The SUPERIOR GaN DTQ13N65GS is a 90mΩ, 650VGaN power HEMT device. It can be directly driven from astandard 12V PWM controller, or the new generations of6V PWM controllers dedicated to GaN HEMT. Noexternal VCC is needed in either case. This device haslow input/output capacitances which allows switching athigh frequency with minimum loss. Due to its highbreakdown voltage and high reliability, it can be safelyused to improve efficiency and power density whilebringing down overall system cost at the same time. Its lowinductance QFN package greatly helps to minimize variousground bounce related issues. Provision for controlledswitching transition time helps reduce EMI veryeffectively.