1.0 Features

• 650V enhancement mode HEMT with integrated driver

• 90mΩ RDSON

• 5V PWM input

• UVLO protection

• Zero reverse recovery

• Low quiescent current driver

• Adjustable turn-on slew rate

• Dv/Dt immunity both with/without driver-supply

• Low propagation delay for up to 2MHz operation

2.0 Topologies and Applications

• As switching FETs in singles, or in pairs as half-bridges

• AC-DC, DC-DC, DC-AC converters

• PFC applications (totem pole and standard)

• High frequency LLC converters

• Mobile chargers and laptop adapters

• LED and motor drives

• Server power supplies

3.0 Description

The DTQ13N65GN is a 90mΩ, 650V GaN HEMT devicewith integrated driver circuit. The monolithic integration ofdriver minimizes inductance in the gate loop enabling safeand clean switching even at high-voltage high-frequencyoperations.This device makes the applications more efficient/reliable,and also reduces the size of the magnetic componentsdramatically. UVLO function of the device turns-off the HEMTin case VDD voltage droops below its threshold voltage. Aproprietary dv/dt protection circuit protects the HEMT fromdrain-dvdt induced false turn-on even in the absence of VDDsupply. An external resistance between Vreg and RG allowscontrol of drain voltage slew rate for best EMI performance