零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Singlechannel3.0-15.0Vpeak15.0AH-bridgedriverchip | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelPowerMOSFET DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
30A,200V,0.085Ohm,N-ChannelPowerMOSFET ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRds(on) •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highvoltage) | SamsungSamsung Group 三星三星半导体 | Samsung | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
产品属性
- 产品编号:
DS2505+
- 制造商:
Analog Devices Inc./Maxim Integrated
- 类别:
集成电路(IC) > 存储器
- 包装:
管件
- 存储器类型:
非易失
- 存储器格式:
EPROM
- 技术:
EPROM - OTP
- 存储容量:
16Kb(16K x 1)
- 存储器接口:
1-Wire®
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
通孔
- 封装/外壳:
TO-226-3,TO-92-3 标准主体(!--TO-226AA)
- 供应商器件封装:
TO-92-3
- 描述:
IC EPROM 16KBIT 1-WIRE TO92-3
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DALLAS |
22+ |
TO-92 |
2500 |
原装现货特价热卖!!!0755-83210901 |
询价 | ||
MAXIM |
23+ |
TO92 |
20000 |
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全 |
询价 | ||
MAXIM |
21+ |
TO-92 |
4500 |
询价 | |||
MAX |
22+ |
TO-92 |
2000 |
绝对原装正品 |
询价 | ||
MAXIM |
21+ |
TO-92-3 |
15000 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | ||
Maxim Integrated |
2207 |
NA |
300 |
自营现货,只做正品 |
询价 | ||
MAXIM |
24+ |
TO-92 |
10000 |
只做原装 有挂有货 假一赔十 |
询价 | ||
MAXIM/美信 |
23+ |
TO-92 |
17048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
MAXIM/美信 |
23+ |
TO-92 |
21316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
Dallas |
23+ |
TO-92-3 |
6672 |
询价 |
相关规格书
更多- DS2505+T&R
- DS2505P+T&R
- DS25BR100TSD/NOPB
- DS25BR110TSD/NOPB
- DS25BR150EVK/NOPB
- DS25BR204EVK/NOPB
- DS25BR400TSQ/NOPB
- DS25CP102EVK/NOPB
- DS25CP102TSQ/NOPB
- DS25CP104EVK/NOPB
- DS25CP152QSQ/NOPB
- DS25MB100TSQ/NOPB
- DS25MB200TSQ/NOPB
- DS26303L-75+
- DS26303LN-75+
- DS26334G+
- DS26334GNA3
- DS26503L+
- DS26504L+
- DS26518GN+
- DS26521L+
- DS26528GA5+
- DS26C31MJ/883
- DS26C31TM
- DS26C31TMX
- DS26C31TN
- DS26C32AMJ/883
- DS26C32ATM
- DS26C32ATMX
- DS26F32ME/883
- DS26LS31CM
- DS26LS31CMX/NOPB
- DS26LS31CN/NOPB
- DS26LS31MJ/883
- DS26LS31MW/883
- DS26LS32ACMX/NOPB
- DS26LS32CM
- DS26LS32CN
- DS26LS32MJ/883
- DS26LV31TM
- DS26LV31TMX
- DS26LV31TMX/NOPB
- DS26LV32ATM/NO>
- DS26LV32ATMX
- DS2703U+
相关库存
更多- DS2505P+
- DS25BR100EVK/NOPB
- DS25BR101TSDE/NOPB
- DS25BR120TSD/NOPB
- DS25BR150TSD/NOPB
- DS25BR204TSQ/NOPB
- DS25BR440TSQ/NOPB
- DS25CP102QSQ/NOPB
- DS25CP104ATSQ/NOPB
- DS25CP114TSQE/NOPB
- DS25CP152TSQ/NOPB
- DS25MB200-EVK
- DS26303L-120+
- DS26303LN-120+
- DS26324GN+
- DS26334GN+
- DS26502LN+
- DS26503LN+
- DS26514GN+
- DS26518GNB1+
- DS26522G+
- DS26C31ME/883
- DS26C31MW/883
- DS26C31TM/NOPB
- DS26C31TMX/NOPB
- DS26C31TN/NOPB
- DS26C32AMW/883
- DS26C32ATM/NOPB
- DS26C32ATMX/NOPB
- DS26F32MW/883
- DS26LS31CM/NOPB
- DS26LS31CN
- DS26LS31ME-SMD
- DS26LS31MJ-SMD
- DS26LS32ACM/NOPB
- DS26LS32ACN/NOPB
- DS26LS32CM/NOPB
- DS26LS32CN/NOPB
- DS26LS33MJ/883
- DS26LV31TM/NOPB
- DS26LV31TMX/NO>
- DS26LV32ATM
- DS26LV32ATM/NOPB
- DS26LV32ATMX/NOPB
- DS2704G+