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DS1258Y-100-IND中文资料PDF规格书
DS1258Y-100-IND规格书详情
DESCRIPTION
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.
FEATURES
10-Year Minimum Data Retention in the Absence of External Power
Data is Automatically Protected During a Power Loss
Separate Upper Byte and Lower Byte Chip Select Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as 70ns
Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time
Full 10 Operating Range (DS1258Y)
Optional 5 Operating Range (DS1258AB)
Optional Industrial Temperature Range of -40C to +85C, Designated IND
产品属性
- 型号:
DS1258Y-100-IND
- 制造商:
DALLAS
- 制造商全称:
Dallas Semiconductor
- 功能描述:
128k x 16 Nonvolatile SRAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
DALLAS |
2016+ |
DIP16 |
6523 |
只做原装正品现货!或订货! |
询价 | ||
NS |
10+ |
DIP |
7800 |
全新原装正品,现货销售 |
询价 | ||
DALLAS |
22+ |
DIP16 |
877 |
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙ |
询价 | ||
DALLAS |
23+ |
MOD |
65480 |
询价 | |||
DALLAS |
23+ |
DIP |
60 |
询价 | |||
原厂正品 |
23+ |
DIP-8 |
5000 |
原装正品,假一罚十 |
询价 | ||
DALLAS |
DIP |
428 |
询价 | ||||
MaximIntegratedProducts |
2022 |
ICNVSRAM2MBIT70NS40DIP |
5058 |
原厂原装正品,价格超越代理 |
询价 | ||
DALLAS |
2023+ |
DIP |
53528 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||
DALLAS |
2305+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 |