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BF505

NPNSILICONRFTRANSISTOR

NPNSiliconRFTransistor BF505isanNPNsiliconplanarRFtransistorinTO92plasticpackage(10A3DIN41868). ThetransistorisparticularlyintendedforuseinVHFamplifiersincommonemitterconfiguration,VHFmixersandVHF/UHFoscillators.

SIEMENS

Siemens Ltd

BFC505

NPNwidebandcascodetransistor

DESCRIPTION Cascodeamplifierwithtwodiscretediesinasurfacemount,5-pinSOT353(S-mini)package.TheamplifierisprimarilyintendedforlowpowerRFcommunicationsequipment,suchaspagersandhasaverylowfeedbackcapacitanceresultinginhighisolation. FEATURES •Smallsize •Hig

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFE505

NPNwidebanddifferentialtransistor

DESCRIPTION EmittercoupleddualNPNsiliconRFtransistorinasurfacemount,5-pinSOT353(S-mini)package.ThetransistorisprimarilyintendedforapplicationsintheRFfrontendasabalancedmixer,adifferentialamplifierinanaloganddigitalcellularphones,andincordlessphones,page

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG505

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG505

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG505

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG505

NPN9GHzwidebandtransistors

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

BFG505/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG505/X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG505/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG505/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG505W

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG505W

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG505W/X

NPN9GHzwidebandtransistors

DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG505W-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG505W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG505-X

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFM505

DualNPNwidebandtransistor

DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount,6-pinSOT363(S-mini)package.ThetransistorsareprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellularphones,cordlessphones,radardetectors,pagersandsat

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFM505

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFR505

NPN9GHzwidebandtransistor

DESCRIPTION TheBFR505isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

供应商型号品牌批号封装库存备注价格
THERMOPTICS
19
DIP
100
The DN505 is a subminiature proportionally controlled heater whose temperature can be programmed with a single external resistor. This device is ideally suited for regulating the temperature of sensitive electronic components such as microwave filters
询价
1999
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
最新
1999
原装正品 现货供应 价格优
询价
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
GENERIC
3361
全新原装 货期两周
询价
IXYS艾赛斯
1641+
SOP8
7600
代理品牌
询价
IXYS/艾赛斯
21+ROHS
SOP-8
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Hirose
2020+
N/A
8
加我qq或微信,了解更多详细信息,体验一站式购物
询价
Hirose
22+
NA
8
加我QQ或微信咨询更多详细信息,
询价
THERMOP
24+
SMD
10250
只做原装13691986278微信
询价
更多DN505–PROP供应商 更新时间2024-5-24 16:48:00