Features

• DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:

• Low RDS(ON) - minimizes conduction losses

• Low VSD - reducing the losses due to body diode conduction

• Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses

• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-through or cross conduction currents at high frequencies

• Avalanche rugged – IAR and EAR rated

• Lead Free, RoHS Compliant (Note 1)

• Green Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability