RF Power MOSFET

♦ N-Channel Enhancement Mode

♦ Low Qgand Rg

♦ High dv/dt

♦ Nanosecond Switching

♦ 50MHz Maximum Frequency

Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced low Qgprocess

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other haz ardous materials

Advantages

• Optimized for RF and high speed switching at frequencies to 50MHz

• Easy to mount—no insulators needed

• High power density