DAM35N40H

N-Channel Enhancement Mode MOSFET

FQA35N40

400VN-ChannelMOSFET

Features •35A,400V,RDS(on)=0.105Ω@VGS=10V •Lowgatecharge(typical110nC) •LowCrss(typical65pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQA35N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=35A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.105Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FQH35N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=35A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.105Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQH35N40

400VN-ChannelMOSFET