| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModePowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel40-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
N-Channel40V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel40-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested APPLICATIONS •SynchronousRectification •PowerSupplies | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP80N04MDG,NP80N04NDG,andNP80N04PDGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Logiclevel •Superlowon-stateresistance -NP80N04MDG,NP80N04NDG RDS(on)1=4.8mΩMAX.(VGS=10V,ID=40A) R | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel40-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.0mΩMAX.(VGS=10V,ID=40A) •Lowinputcapacitance Ciss=2200pF | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
2019 |
TO-252 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
N |
23+ |
TO-252 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
N |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
询价 | ||
NCE/新洁能 |
2022+ |
TO-252 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
VB |
TO-252 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
NCE/新洁能 |
2022+ |
TO-252 |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
询价 | ||
NCE/新洁能 |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
2322+ |
NA |
33220 |
无敌价格 主销品牌 正规渠道订货 免费送样!!! |
询价 | |||
NCE/新洁能 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
JXND/嘉兴南电 |
23+ |
TO-263 |
100000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
相关规格书
更多- D8155C
- D8155HC
- D8202A
- D8203-1
- D8216
- D8228
- D82288-10
- D82288-8
- D8237AC-5
- D8243
- D8243HC
- D8251AC
- D8253
- D8253-5
- D8253C-2
- D8254
- D8255A
- D8255AC-2
- D8257C-2
- D82588
- D8259A-2
- D8259AC-2
- D8273
- D8279
- D8279C-2
- D8284A
- D8287
- D8289
- D82C284-10
- D82C284-8
- D82C288-12
- D82C43C
- D82C55AC-2
- D85C060-15
- D8741A
- D8742
- D8748H
- D8749H
- D8751H
- D8755A
- D87C51
- D880
- D92-02
- D98L55AIV
- DA108S1RL
相关库存
更多- D8155H
- D8155HC-2
- D8203
- D8212
- D8224
- D82284-8
- D82288-12
- D8237A-5
- D8238
- D8243C
- D8251A
- D8251AFC
- D82530-6
- D8253AC-2
- D8253C-5
- D8254-2
- D8255A-5
- D8255AC-5
- D8257C-5
- D8259A
- D8259AC
- D8259C-5
- D8274
- D8279-5
- D8279C-5
- D8286
- D8288
- D8293
- D82C284-12
- D82C288-10
- D82C288-8
- D82C501AD
- D83-004
- D85C220-80
- D8741AD
- D8748
- D8748HD
- D8749HD
- D8752BH
- D8755AD
- D87C51FA
- D882
- D9816ACV
- DA108S
- DA112S
