| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,250V,0.700Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandP-Channelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
7A,250V,0.70Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
5A,250V,0.715Ohm,RadHard,N-ChannelPowerMOSFETs Description TheIntersilCorporationhasdesignedaseriesofSECONDGENERATIONhardenedpowerMOSFETsofbothNandPchannelenhancementtypeswithratingsfrom100Vto500V,1Ato60A,andonresistanceaslowas25mΩ.Totaldosehardnessisofferedat100KRAD(Si)and1000KRAD(Si)withneutro | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
DC/DCConverterApplications Features •LowON-resistance. •4.0Vdrive. •Ultrahigh-speedswitching. | SANYOSanyo 三洋三洋电机株式会社 | SANYO | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
SinglechipUSBtoasynchronousserialdatatransferinterface | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
TheFT234XDisaUSBtoserialUARTinterfacewithoptimisedpackaging(3mmx3mm12pinDFN)forsmallerPCBdesignsandthefollowingadvancedfeatures | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI | ||
USBtoBASICUARTIC | FTDIFuture Technology Devices International Ltd FTDIFuture Technology Devices International Ltd | FTDI |
详细参数
- 型号：
D234
- 功能描述：
Single & Dual Output Miniature, 2W SIP DC/DC Converters
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOS |
2023+ |
TO-220 |
8700 |
原装现货 |
询价 | ||
MICROCHIP/微芯 |
18+ |
SOIC |
35583 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
. |
1746+ |
pcs |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
ALLEGRO |
23+ |
SOP24 |
65480 |
询价 | |||
TOSHIBA |
20+ |
TO-3P |
36500 |
原装现货/放心购买 |
询价 | ||
MICROCHIP/微芯 |
23+ |
SOIC |
25500 |
授权代理直销,原厂原装现货,假一罚十,特价销售 |
询价 | ||
MICROCHIP/微芯 |
2021+ |
SOIC |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
TOSHIBA/东芝 |
TO-3P |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
微芯Microchip |
21+ |
SOIC |
4550 |
全新原装现货 |
询价 | ||
MICROCHIP/微芯 |
22+ |
SOIC |
9600 |
原装现货,优势供应,支持实单! |
询价 |
相关规格书
更多- D23-4
- D23418-000
- D2345
- D234-6
- D234ERW
- D234RW
- D23523-000
- D235ERW
- D235RW
- D2364
- D236I
- D236RW
- D23743-000
- D2376CE
- D237ERW
- D237RW
- D23848-000
- D238ERW
- D238S12SEITE1BIS5
- D2396
- D23BCN
- D-24
- D24000LP18PF/15
- D2401
- D24019-000
- D2402
- D240505ND-1W
- D240505XD-1W
- D240505XNS-1W
- D240505XS-1W
- D24050-601
- D240509XND-1W
- D24052-5001
- D24066QM96G4Q1
- D24083-000
- D240909NS-1W
- D240JCTT1W
- D240LC40-4000
- D240SC 3M-4000
- D240SC 4M-4000
- D240SC4M
- D240SC4M-4000
- D240SC6M
- D240SC6M-4000
- D241
相关库存
更多- D23413-000
- D2342-4
- D2346
- D234-6C
- D234I
- D235
- D23564-000
- D235I
- D236
- D236ERW
- D236NP
- D237
- D2376AE
- D23777-000
- D237I
- D-238
- D238-8
- D238RW
- D238S12T
- D239ERW
- D23D
- D2400
- D2400X2
- D-240-100
- D24019-21
- D24050-5001
- D240505NS-1W
- D240505XND-1W
- D240505XNS-2W
- D240505XS-W5
- D240509XD-1W
- D24051QM96G4Q1
- D24053-000
- D24067IM96G4Q1
- D240909ND-1W
- D240909XNS-2W
- D240LC40
- D240SC 3M
- D240SC 4M
- D240SC3MH
- D240SC4M_10
- D240SC4MH
- D240SC6M_10
- D240SC6MH
- D2410
