首页 >D13N10AMOS(场效应管)>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=185mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,12.8A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | |||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,12.8A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=185mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=12.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
100VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
100VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
100VN-ChannelMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelMOSFETTransistor | TGS Tiger Electronic Co.,Ltd | |||
N-ChannelQFETMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelQFETMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
100VN-ChannelMOSFET Features VDS(V)=100V ID=10A(VGS=10V) RDS(ON) | UMWUMW 友台友台半导体 | |||
N-ChannelQFETMOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor®’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigha | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
17 |
22+ |
TO-252 |
3000 |
原装现货假一赔十 |
询价 | ||
PHI |
2022+ |
10+ |
7300 |
原装现货 |
询价 | ||
PHI |
23+ |
10+ |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
PHI |
23+ |
10+ |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
PHL |
17+ |
SOP |
6200 |
100%原装正品现货 |
询价 | ||
NXP |
0840+ |
SOP8 |
12000 |
特价热销现货库存100%原装正品欢迎来电订购! |
询价 | ||
NXP |
2020+ |
SOP |
3910 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
NXP |
1308+ |
SOP8 |
5083 |
询价 | |||
PHILIPS |
07+ |
SOP8 |
300 |
询价 | |||
NXP |
2017+ |
SOP8 |
35886 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 |
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