BUZ10S2

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rated)

SIPMOS®PowerTransistor •Nchannel •Enhancementmode •Avalanche-rated

BUZ10S2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.07Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

DF10S2

BridgeRectifier

ee Description Withtheever-pressingneedtoimprovepowersupplyefficiency,improvesurgerating,improvereliability,andreducesize,theDFxS2familysetsanewstandardinperformance. Thenewdesignoffersanimprovedsurgeratingof85A.Thisisespeciallyimportantwhenstrivingtoi

MO10S2B-C

MO10S2BForcepointCompatibleTransceiverSFP10GBase-SR(850nm,MMF,300m,DOM)

Features ATGBICSMO10S2B 10GBase-SRsupportsadistanceofupto300movermulti-modefibre (MMF)usingawavelengthof850nmviaanLCconnector. Digitalopticalmonitoring(DOM)supportisalsopresentenablingreal-time monitoringoftheparametersofthefibre optictransceiver. Ourproduct

PB10S2

SINGLE-PHASESILICONBRIDGERECTIFIER