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APC1001U_EK	文件：1.36032 Mbytes Page：26 Pages	AirPurificationComboONE KeyFeatures&Benefits Calibratedsignaloutputsincompliance withinternationalstandards(PM1.0, PM2.5,PM10,TVOC,eCO2 1,AQI2, temperatureandrelativehumidity). Matchbox-size,fullyorchestrated designforspace-constrainedapplications andlowestoverallBOMcosts. Systemlevel	SCIOSENSESciosense B.V. 感奥艾半导体	SCIOSENSE
APL1001J	文件：75.68 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APL1001J	文件：37.95 Kbytes Page：2 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE	ADPOW Advanced Power Technology	ADPOW
APL1001P	文件：37.95 Kbytes Page：2 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV®SINGLEDIEISOTOP®PACKAGE	ADPOW Advanced Power Technology	ADPOW
APN1001	文件：195.71 Kbytes Page：5 Pages	CircuitModelsforPlasticPackagedMicrowaveDiodes Introduction Discrete,low-cost,surfacemountsemiconductordiodesareattractivechoicesforUHFandmicrowaveapplicationswherepackageparasiticmayhaveasignificantimpactonperformance.ThemostcommonpackagestylesaretheSOT-23andtheSOD-323(Figure1)whichwereneitherdesigne	SKYWORKSSkyworks Solutions Inc. 思佳讯美国思佳讯公司	SKYWORKS
APT1001	文件：35.76 Kbytes Page：2 Pages	PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT1001RAN	文件：309.64 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001RBLC	文件：35.76 Kbytes Page：2 Pages	PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT1001RBN	文件：50.79 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT1001RBN	文件：359.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001RBNR	文件：371.21 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001RBVFR	文件：371.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001RBVFR	文件：123.99 Kbytes Page：4 Pages	POWERMOSVFREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •AvalancheEner	ADPOW Advanced Power Technology	ADPOW
APT1001RBVR	文件：68.19 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT1001RSLC	文件：35.76 Kbytes Page：2 Pages	PowerMOSVIisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSVI™isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally	ADPOW Advanced Power Technology	ADPOW
APT1001RSVFR	文件：123.99 Kbytes Page：4 Pages	POWERMOSVFREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •AvalancheEner	ADPOW Advanced Power Technology	ADPOW
APT1001RSVR	文件：71.22 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT1001RSVR	文件：76 Kbytes Page：4 Pages	100AvalancheTested PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
APT1001RSVRG	文件：76 Kbytes Page：4 Pages	100AvalancheTested PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
ARJ-1001	文件：628.88 Kbytes Page：2 Pages	GIGABITRJ45LANMAGNETIC	ABRACONAbracon Corporation 阿布雷肯	ABRACON

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详细参数

型号：
D1001UK
制造商：
TT Electronics/ Semelab
功能描述：
MOSFETRFN CHSE28V20W175MHZDA
功能描述：
MOSFET,RF,N CH,SE,28V,20W,175MHZ,DA
制造商：
SEMELAB
功能描述：
MOSFET,RF,N CH,SE,28V,20W,175MHZ,DA; Transistor
Type：
RF FET; Drain Source Voltage
Vds：
70V; Continuous Drain Current
Id：
5A; Power Dissipation
Pd：
50W; Operating Frequency
Min：
3.1GHz; Operating Frequency
Max：
3.5GHz; No. of
Pins：
4 ;RoHS
Compliant：
Yes
制造商：
TT Electronics/Semelab
功能描述：
RF POWER TRANSISTOR MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市金华微盛电子有限公司	D1001UK	SEMELAB	2019+	SMD	6992	原厂渠道可含税出货	询价
深圳市旺财半导体有限公司	D1001UK	SML	23+		1688	房间现货库存:QQ:373621633	询价
深圳市毅创腾电子科技有限公司	D1001UK	SEME-LAB	23+	高频管	200	专营高频管模块,全新原装!	询价
深圳市达恩科技有限公司	D1001UK	Semelab	18+	NA	3000	进口原装正品优势供应QQ3171516190	询价
深圳市粤骏腾电子科技有限公司	D1001UK	SEMELAB	23+		224	价格优势	询价
深圳市百诺芯科技有限公司	D1001UK	SML	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市航润创能电子集团有限公司	D1001UK	SEMELAB	21+	SMD	35	原装现货假一赔十	询价
深圳市安富世纪电子有限公司	D1001UK	SEMELAB	21+	N/A	50000	全新原装正品现货,支持订货	询价
深圳市航宇科工半导体有限公司	D1001UK	Semelab / TT Electronics	22+	N-Channel	2864	航宇科工半导体-中国航天科工集团战略合作伙伴!	询价
深圳市威雅利发展有限公司	D1001UK	SEMELAB	1117+	N/A	10	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多D1001UK供应商更新时间2024-5-21 16:03:00

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