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CY7C2565XV18-600BZC中文资料PDF规格书

CY7C2565XV18-600BZC
厂商型号

CY7C2565XV18-600BZC

参数属性

CY7C2565XV18-600BZC 封装/外壳为165-LBGA;包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC SRAM 72MBIT PARALLEL 165FBGA

功能描述

72-Mbit QDR짰 II Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

文件大小

614.89 Kbytes

页面数量

29

生产厂商 CypressSemiconductor
企业简称

Cypress赛普拉斯

中文名称

赛普拉斯半导体公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-6-4 18:03:00

CY7C2565XV18-600BZC规格书详情

Functional Description

The CY7C2563XV18 and CY7C2565XV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.

Features

■ Separate independent read and write data ports

❐ Supports concurrent transactions

■ 633 MHz clock for high bandwidth

■ Four-word burst for reducing address bus frequency

■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 1266 MHz) at 633 MHz

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ On-die termination (ODT) feature

❐ Supported for D[x:0], BWS[x:0], and K/K inputs

■ Single multiplexed address input bus latches address inputs for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR® II+ Xtreme operates with 2.5 cycle read latency when DOFF is asserted HIGH

■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW

■ Available in × 18, and × 36 configurations

■ Full data coherency, providing most current data

■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.6 V

❐ Supports 1.5 V I/O supply

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

■ Phase-locked loop (PLL) for accurate data placement

产品属性

  • 产品编号:

    CY7C2565XV18-600BZC

  • 制造商:

    Cypress Semiconductor Corp

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    托盘

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,QDR II+

  • 存储容量:

    72Mb(2M x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    1.7V ~ 1.9V

  • 工作温度:

    0°C ~ 70°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    165-LBGA

  • 供应商器件封装:

    165-FBGA(13x15)

  • 描述:

    IC SRAM 72MBIT PARALLEL 165FBGA

供应商 型号 品牌 批号 封装 库存 备注 价格
SPANSION(飞索)
2021+
FBGA-165(13x15)
499
询价
Cypress
21+
165FBGA (13x15)
13880
公司只售原装,支持实单
询价
Cypress
23+
165FBGA (13x15)
9000
原装正品,支持实单
询价
CYPRESS/赛普拉斯
23+
NA
25630
原装正品
询价
CYPRESS/赛普拉斯
22+
N/A
12245
现货,原厂原装假一罚十!
询价
CYPRESS/赛普拉斯
标准封装
58877
一级代理原装正品现货期货均可订购
询价
CYPRESS/赛普拉斯
22+
NA
10000
绝对全新原装现货热卖
询价
Cypress
22+/23+
165-FBGA(13x15)
9800
原装进口公司现货假一赔百
询价
CYPRESS/赛普拉斯
21+
NA
12820
只做原装,质量保证
询价
Cypress
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价