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IRGB6B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB6B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGIB6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGIB6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGIB6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •R

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGIB6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS6B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS6B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS6B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrentSharing

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL6B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •LowEMI. •ExcellentCurrent

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-220isavailableinPbFasaLead-Free Benefits •BenchmarkEff

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10μsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl. •Ru

IRFInternational Rectifier

英飞凌英飞凌科技公司

供应商型号品牌批号封装库存备注价格
23+
TO252
20000
原厂原装正品现货
询价
2023+
TO252
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
23+
TO252
5000
专注配单,只做原装进口现货
询价
23+
TO252
5000
专注配单,只做原装进口现货
询价
BudIndustries
5
全新原装 货期两周
询价
Bud Industries
2022+
1
全新原装 货期两周
询价
Bud
22+
NA
80
加我QQ或微信咨询更多详细信息,
询价
NEC
22+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ADICOMM
24+
QFP-100
5000
全现原装公司现货
询价
ADICOMM
19+
QFP-100
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
更多CU6B60供应商 更新时间2024-6-4 14:30:00