首页 >CTQ4435-BF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TOROIDALPOWERINDUCTORSELF-LEADEDANDCLIPMOUNT | RENCORENCO ELECTRONICS 朗科电子集团 | RENCO | ||
P-ChannelEnhancementModePowerMOSFET | RECTRONRECTRON LTD 瑞创深圳市瑞创科技有限公司 | RECTRON | ||
ETC | ||||
P-ChannelEnhancementModeMOSFET P-ChannelEnhancementModeMOSFET FEATURES SurfaceMountPackage. SuperhighdensecelldesignforlowRDS(ON). Ruggedandreliable. | Samhop 三合微科 | Samhop | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
P-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •AdvancedHighCellDensityProcess •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitches •BatterySwitch | VishayVishay Siliconix 威世科技 | Vishay | ||
P-Channel30-V(D-S)MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
P-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •AdvancedHighCellDensityProcess •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitches •BatterySwitch | VishayVishay Siliconix 威世科技 | Vishay | ||
P-Channel30-V(D-S)MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
P-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitches •BatterySwitch | VishayVishay Siliconix 威世科技 | Vishay | ||
P-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
P-Channel30-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitches •BatterySwitch | VishayVishay Siliconix 威世科技 | Vishay | ||
P-ChannelMOSFET ■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
PowerMOSFET(Vdss=-30V,Rds(on)=0.020ohm VDSS=-30V RDS(on)=0.020Ω Description TheseP-channelHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
30VP-ChannelPowerTrenchMOSFET GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features •–8.8A,–30VRDS(ON)=20mΩ@VGS | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-ChannelMOSFET ■Features ●VDS=-30V ●RDS(on)=0.02Ω@VGS=-10V ●RDS(on)=0.035Ω@VGS=-4.5V ●Pb−FreePackageMaybeAvailable.TheG−SuffixDenotesa Pb−FreeLeadFinish | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET VDSS=-30V RDS(on)=0.020Ω Description TheseP-channelHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforusei | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
详细参数
- 型号：
CTQ4435-BF
- 制造商：
CT
- 制造商全称：
Central Technologies
- 功能描述：
Standard Flyback Regulators
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Essentra |
22+ |
NA |
168 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
AAC |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
RED |
20+ |
传感器 |
96 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Red Lion Controls |
21+ |
模块,单通式 |
6000 |
原装传感器热卖,渠道保证,正品可靠 |
询价 | ||
VISHAY(威世) |
23+ |
303 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
DURATOOL |
2308+ |
166284 |
一级代理,原装正品,公司现货! |
询价 | |||
DURATOOL |
21+ROHS |
731355 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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