| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
6A,-100V,0.660Ohm,RadHard,SEGRResistant,P-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inpartic | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
PChannelPowerMOSFET | GSGGunter Seniconductor GmbH. Gunter Seniconductor GmbH. | GSG | ||
3ALEDDriverwithDimmingControl | GAMMA GAMMA electronics | GAMMA | ||
FrequencySynthesizer | SHOULDERShoulder 无锡市好达电子有限公司 | SHOULDER | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐新唐科技股份有限公司 | Nuvoton | ||
ISDCortex??M0ChipCorder | NuvotonNuvoton Technology Corporation 新唐新唐科技股份有限公司 | Nuvoton | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P?밅HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET -12A,-100V,0.30Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
TRANSISTORSP-CHANNEL(Vdss=-100V,Rds(on)=0.30ohm,Id=-11A) ProductSummary TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR REPETITIVEAVALANCHEANDdv/dtRATED HEXFET®TRANSISTOR Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitythe | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
SimpleDriveRequirements | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Avalanche-Energy-RatedP-ChannelPowerMOSFETs -5.5Aand-6.5A,-60Vand-100VrDS(on)=0.30Ωand0.40Ω TheIRFF9130,IRFF9131,IRFF9132andIRFF9133areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearep-channelenhancement-modesilicon-gat | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
P-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
P-ChannelMOSFETinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
-6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET -6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
21+ |
SMD |
19 |
原装现货假一赔十 |
询价 | ||
N/A |
22+ |
SMD |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
N/A |
21+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
N/A |
SMD |
23 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
QORVO |
2022+ |
QFN |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
N/A |
SMD |
25 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | |||
N/A |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
N/A |
2023+ |
SMD |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
N/A |
SMD |
125 |
全新原装 实单必成 |
询价 | |||
N/A |
2023+ |
SMD |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 |
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