MV5460

CLEARLENST-100SOLIDSTATELAMPS

NTE5460

SiliconControlledRectifier(SCR)

Description: TheNTE5460isdesignedprimarilyforhalf–waveACcontrolapplicationssuchasmotorcontrols,heatingcontrols,andpowersupplycrowbarcircuits. Features: •GlassPassivatedJunctionwithCenterGateFireforGreaterParameterUniformityandStability •Small,Rugged

PJQ5460A

60VN-ChannelEnhancementModeMOSFET

PR5460

Fourphotodiodeswithcurrentoutput

SMP5460

N-ChannelSiliconJunctionField-EffectTransistors

SmallOutline(SurfaceMount)PackageDevices

SN5460

DUAL4-INPUTEXPANDERS

SN5460J

DUAL4-INPUTEXPANDERS

SN5460W

DUAL4-INPUTEXPANDERS

SST5460

P-ChannelJFETs

SST5460

P-ChannelJFETs

features
HighInputImpedance
VeryLowNoise
HighGain:AV=80@20
A
LowCapacitance:1.2pFTypical benefits
LowSignalLoss/SystemError
HighSystemSensitivity
High-QualityLow-LevelSignal Amplification applications
Low-Current,Low-VoltageAmplifiers
High-

STLC5460

LINECARDINTERFACECONTROLLER

DESCRIPTION TheLineCardInterfaceController,STLC5460,isamonolithicswitchingdeviceforthepathcontrolofupto128channelsof16,32,64kbpsbandwidth.Twoconsecutive64kbpschannelsmayalsobehandledasaquasisingle128kbpschannel.Forthesechannels,theLCICperformsnon-bl

TTC5460B

BipolarTransistorsSiliconNPNTriple-DiffusedType

Applications •DynamicFocus •High-VoltageSwitching •High-VoltageAmplifiers Features (1)Highcollectorvoltage:VCEO=800V

VB5460

N-andP-Channel40V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC