| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | ||
N-CHANNELMOSFETinaTO-263PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-220packaging •Lowswitchingloss •Ultralowgatecharge •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications •AC-DCconverters •LEDlighting •Unin | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
N-ChannelPowerTrench짰MOSFET Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •RDS(on)=8.2mΩ(Typ.)@VGS=10V,ID=75A •Fastswitch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 |  | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon | IXYS IXYS Integrated Circuits Division |  | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | ||
TMOSPOWERFET100AMPERES100VOLTSRDS(on)=0.011OHM TMOSE-FET™PowerFieldEffecttransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforh | MotorolaMotorola, Inc 摩托罗拉 |  | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GY |
22+ |
TO-220 |
900000 |
原装正品/深圳现货 |
询价 | ||
华晶 |
TO-220 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
华晶 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
华晶 |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
华晶 |
23+ |
NA/ |
4150 |
原装现货,当天可交货,原型号开票 |
询价 | ||
CRMICRO/华润微 |
23+ |
TO-220 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
CRMICRO/华润微 |
23+ |
TO-220 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
CS华润华晶 |
21+ROHS |
TO-220AB |
690000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
CML |
24+25+/26+27+ |
车规-LED光电器 |
36200 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
SMICRO |
45 |
询价 |
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