DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMNT3904E and CMNT3906E Low VCE(SAT) NPN and PNP Transistors, respectively, are designed for applications where ultra small size and power dissipation are the prime requirements. Packaged in an FEMTOmini™ SOT-953 package, these components provide performance characteristics suitable for the most demanding size constrained applications.

MARKING CODES: CMNT3904E: CL

CMNT3906E: CM

FEATURES

• Very Small Package Size

• Low Package Profile, 0.5mm

• 200mA Collector Current

• Low VCE(SAT) (0.1V Typ @ 50mA)

• Small, FEMTOmini™ 1 x 0.8mm, SOT-953 Surface Mount Package

APPLICATIONS

• DC / DC Converters

• Voltage Clamping

• Protection Circuits

• Battery powered equipment including:

Cell Phones, Digital Cameras, Pagers,

PDAs, Laptop Computers, etc.

CMNT3906E属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。美国中央半导体制造生产的CMNT3906E晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。