AOI425

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-55A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ASL425

200-4000MHzMMICAmplifier

ASL425

200~4000MHzMMICAmplifier

AVHF425

IlluminatedPushbutton-22,25,28&30mm

AVHT425

IlluminatedPushbutton-22,25,28&30mm

BE425M

APCBack-UPS,6Outlets,425VA,120V

BFG425W

GENERALPURPOSETRANSISTORRFNPNTRANSISTORMICROWAVELOWNOISE

DESCRIPTION UHF25GHz,lownoisetransistorwithSiGeHBTtechnique,highpowergain,lownoiseandlargedynamicrange.TheadoptionofsubminiatureSOT-343package,especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFbroadbandhighfrequencylownoiseampli

BFG425W

iscSiliconNPNRFTransistor

DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •DesignedforuseinRFwidebandamplifiersandoscillators.

BFG425W

Microwave,lownoise,SiGeNPNHBT

Microwave,lownoise,SiGeNPNHBT UHF25GHZ,lownoisetransistorwithSiGeHBTtechnique,highpowergain,lownoiseandlargedynamicrange.TheadoptionofsubminiatureSOT-343Rpackage,especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFbroadbandhigh

BFG425W

NPNTransistors

■Features ●Veryhighpowergain ●Lownoisefigure ●25GHzwidebandtransistor ●Emitteristhermallead ●Lowfeedbackcapacitance.

BFG425W

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFG425W

NPN25GHzwidebandtransistor

DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI

BGA425

Si-MMIC-AmplifierinSIEGET25-Technologie(Multifunctionalcasc.50廓blockLNA/MIXUnconditionallystable)

Si-MMIC-AmplifierinSIEGET®25-Technologie Preliminarydata •Multifunctionalcasc.50Ωblock(LNA/MIX) •Unconditionallystable •Gain|S21|2=18.5dBat1.8GHz(appl.1) gain|S21|2=22dBat1.8GHz(appl.2) IP3out=+7dBmat1.8GHz(VD=3V,ID=9.5mA) •NoisefigureNF=2

BR425

PinTypeLithiumBatteries(BRSeries):IndividualSpecifications

CDS-425-CW-D

CDSeriesWhiteLEDLinearFixture

CDS-425-CWDIP

CDSeriesWhiteLEDLinearFixture

CDS-425-CW-D-IP

CDSeriesWhiteLEDLinearFixture

CDS-425-CW-M

CDSeriesWhiteLEDLinearFixture

CDS-425-CWMIP

CDSeriesWhiteLEDLinearFixture

CDS-425-CW-M-IP

CDSeriesWhiteLEDLinearFixture